8EWF10S Allicdata Electronics
Allicdata Part #:

8EWF10S-ND

Manufacturer Part#:

8EWF10S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1KV 8A DPAK
More Detail: Diode Standard 1000V 8A Surface Mount D-Pak
DataSheet: 8EWF10S datasheet8EWF10S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 270ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 8EWF10
Description

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Introduction

8EWF10S is a single-phase full bridge with an integrated anti-parallel diode. It is suitable for use in direct current (dc) motor and solenoid applications. The integrated diode design delivers improved reliability and provides a low forward voltage drop.

Application Field

The 8EWF10S is mainly used in applications requiring low forward voltage drop and improved performance in arduous operating conditions. It is suitable for use in DC motor and solenoid applications, as well as in automotive, industrial and consumer electronics. The device is also suitable for use in applications such as refrigeration, power supplies and lighting.

Working Principle

The 8EWF10S consists of two MOSFETs in a full bridge configuration. The integrated anti-parallel diode, which is based on the Schottky diodes, provides the required low forward voltage drop. The device operates in either of two modes: forward or ultra-fast switching. In the forward mode, the two MOSFETs are always on, while in the ultra-fast switching mode, the two MOSFETS are operated in opposite directions, to provide higher frequencies and improved power efficiency.

The MOSFETs used in the 8EWF10S are designed to operate over a wide temperature range (-40 to 125°C). This ensures that the device can operate reliably in both normal and extreme environments. Additionally, the device incorporates integrated thermal protection, which helps prevent it from overheating when subjected to an over-current situation.

The 8EWF10S is designed to be used with a range of external components, such as an RC snubber circuit, which helps to reduce harmonic distortion and improve switching stability. Additionally, a voltage-clamping circuit can be used to protect the device from excessive voltages and, when necessary, a flyback diode can be connected in order to reduce ringing associated with switching.

Conclusion

In conclusion, 8EWF10S is a single-phase full bridge MOSFET with an integrated Schottky diode, suitable for use in a variety of applications, such as DC motor and solenoid control, automotive, industrial and consumer electronics. The device is designed to operate over a wide temperature range, and incorporates integrated thermal protection. Additionally, a range of external components can be used to optimize performance.

The specific data is subject to PDF, and the above content is for reference

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