8TQ080 Allicdata Electronics
Allicdata Part #:

8TQ080-ND

Manufacturer Part#:

8TQ080

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 80V 8A TO220AC
More Detail: Diode Schottky 80V 8A Through Hole TO-220AC
DataSheet: 8TQ080 datasheet8TQ080 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 550µA @ 80V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 8TQ080
Description

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The 8TQ080 is a type of rectifier diode. It is a single diode with a maximum power dissipation of 178 mW and a maximum forward current of 0.8 A. It is packaged in a 2-pin SOT23-3L package. The 8TQ080 is designed to be used in applications such as power management and with switch-mode power supplies.

Application field of 8TQ080

The 8TQ080 has a wide range of applications, including:

  • Power supply rectification
  • Automatic battery chargers
  • Smoothing of DC current
  • Switch-mode power supplies
  • DC-DC converters
  • Linear and switching regulators
  • Inverters
  • Electronic ballasts
  • Telecommunications
  • Automotive electronics
  • Consumer electronics

Working Principle of 8TQ080

The 8TQ080 is a PN junction diode. It consists of two semiconductor layers, one n-type and one p-type, connected together. When a forward voltage is applied to the diode, electrons flow from the n-type layer to the p-type layer, creating a diode current. When a reverse voltage is applied to the diode, the current is blocked and no current flows.

When a forward voltage is applied to the 8TQ080, the electrons flow from the n-type layer to the p-type layer and the diode conducts a forward current. The voltage at which the diode starts to conduct is called the “forward voltage”. The forward voltage of the 8TQ080 is 0.3 V at a forward current of 0.8A. This diode has a low forward voltage and high forward current capability which makes it ideal for use in power management and with switch-mode power supplies.

When a reverse voltage is applied to the 8TQ080, the electrons cannot flow from the n-type layer to the p-type layer and the diode blocks any current flow. This is known as the “reverse breakdown voltage” of the diode. The 8TQ080 has a reverse breakdown voltage of -5 V at a reverse current of 8 mA. This diode has a very low reverse voltage and a very low leakage current, making it ideal for use in applications such as power management and switch-mode power supplies.

The 8TQ080 has a high frequency response and is suitable for switching applications. It is a PIN diode which has a lower capacitance and higher breakdown voltage than other diodes. It also has a lower forward voltage drop and a higher reverse voltage breakdown, making it ideal for use in power management and with switch-mode power supplies.

Conclusion

The 8TQ080 is a single rectifier diode designed for use in power management and with switch-mode power supplies. It has a wide range of applications and a low forward voltage of 0.3 V at 0.8 A forward current. It also has a low reverse breakdown voltage of -5 V at 8 mA reverse current. The 8TQ080 has a high frequency response, low capacitance and low leakage current and is ideal for use in power management and switch-mode power supplies.

The specific data is subject to PDF, and the above content is for reference

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