93C56C-E/MS

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 93C56C-E/MS memory device is a nonvolatile memory that consists of 256 bits of CMOS EEPROM (electrically erasable programmable read-only memory). It combines a low-voltage electrically erasable technology with CMOS high-speed logic to provide a high density solution for nonvolatile memory storage. This memory device has many applications in various fields and is especially popular in embedded system and firmware designs, as well as in communication applications.

The 93C56C-E/MS is composed of a 256-bit memory array, consisting of 16 bytes and 32 address locations. This memory device can store up to 32K bytes of data in its memory array and supports both a page and byte write mode. In page write mode, the minimum page size is 8 bits for byte write mode, the bit size is a single byte.

This memory device is designed to have a low-voltage operation with the ability to work from 1.8V to 6.5V. This allows for the integration of the device into system designs with supply voltage constraints. The device also includes a multiplex address bus scheme, an active high chip select input, and an active low write enable input. It is available in an 8-pin or 10-pin plastic DIP package.

The 93C56C-E/MS can be used for a wide range of applications such as in communication systems, including cellular phones, fiber optics and satellite systems, automotive systems, and digital audio/video systems. It is also used in industrial applications such as machine tool controllers, security systems, medical systems, and embedded systems. The device is also popular for general-purpose nonvolatile memory storage.

The working principle of the 93C56C-E/MS can be compared to an EPROM device. It consists of an array of cells divided into two groups, each of which can store an individual bit of data. The memory cells can be programmed and erase by applying voltages to the required cells. The programming and erasing of the device is done using the low-voltage technology, with the process being controllable through the address bus and control inputs.

When writing to the device, the data is placed onto the data bus and the bits are then written into the device through the appropriate address location. With the page write mode, multiple bytes of data can be written to the device in a single write cycle. When erasing the memory, the device can be programmed back to all logic zero states, which effectively erases the data from the device.

The 93C56C-E/MS memory device is widely used in many system designs due to its high density, low voltage operation, and multiplex address bus architecture. Its ability to store up to 32K bytes of data makes it an ideal solution for embedded system designs, as well as in communication applications and general-purpose nonvolatile memory storage.

The specific data is subject to PDF, and the above content is for reference