Allicdata Part #: | A2I09VD030GNR1-ND |
Manufacturer Part#: |
A2I09VD030GNR1 |
Price: | $ 11.50 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | AIRFAST RF LDMOS WIDEBAND INTEGR |
More Detail: | RF Amplifier IC TO-270WBG-15 |
DataSheet: | A2I09VD030GNR1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 10.45060 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
P1dB: | 33.3dB |
Gain: | 34.3dB |
Noise Figure: | -- |
RF Type: | -- |
Voltage - Supply: | 48V |
Package / Case: | TO-270-15 Variant, Gull Wing |
Supplier Device Package: | TO-270WBG-15 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A2I09VD030GNR1 is a high-performance RF amplifier designed to meet a variety of application requirements. Its high gain, low noise figure, low distortion, high linearity, and efficient performance make it one of the most popular choice for RF amplification applications.
The A2I09VD030GNR1 is typically used in wireless communication systems, instrumentation systems, radar systems, and satellite systems. It is also used in military, high frequency, and ultrasonic applications. Its wideband performance, high linearity, and high output power make it ideal for those applications where wideband amplification is required.
The A2I09VD030GNR1 is an integrated module consisting of an amplifier, a high frequency transistor, and an oscillator. The amplifier is a linear, high-gain type, with a wide operating frequency range. It has a high input-to-output linearity, high gain, and low noise figure. Its output power can be adjusted through the use of a DC power supply. The transistor is a semiconductordependent device. The oscillator is a voltage-controlled oscillator (VCO) with a frequency range of 200 MHz to 8 GHz.
The working principle of the A2I09VD030GNR1 is relatively simple. It is based on the well-known common-source amplifier configuration. The input signal is applied to the gate of a high-frequency transistor. The transistor is then biased appropriately so that it will produce an amplified output. The amplified output is then fed back to the gate of the transistor and the gain of the amplifier is determined by the amount of feedback. The amplified output is then passed through the oscillator to produce a high-frequency signal.
Once the high-frequency signal has been generated, it is amplified by the amplifier, filtered by a bandpass filter, and then delivered to the output stage. The output stage consists of a power amplifier and a passive component, which are used to increase the output power and improve linearity. The output power is then delivered to the desired application.
In summary, the A2I09VD030GNR1 is a high-performance RF amplifier that is suitable for a variety of applications, including wireless communication, instrumentation, radar, satellite, military, high frequency, and ultrasonic applications. It is an ideal solution for applications requiring wideband performance, high linearity, and high output power. Its simple working principle makes it easy to integrate into various systems.
The specific data is subject to PDF, and the above content is for reference
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