ADTC114EUAQ-13 Allicdata Electronics
Allicdata Part #:

ADTC114EUAQ-13-ND

Manufacturer Part#:

ADTC114EUAQ-13

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: PREBIAS TRANSISTOR SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: ADTC114EUAQ-13 datasheetADTC114EUAQ-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02065
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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The ADTC114EUAQ-13 Transistor is a single, pre-biased, bipolar junction transistor(BJT), which can be used for a variety of applications ranging from switching to amplifying. This specific device is a NPN Darlington transistor, and it features both a built in base-emitter resistor and external base resistor to give the device added stability when used in more demanding applications.

The most common applications where the ADTC114EUAQ-13 can be used include switching, amplifying, and signal amplification. In switching, the transistor functions as a switch, being either ”On” or ”Off” and controlling the current that flows through a circuit. Amplifying involves increasing the current flowing through the device, which is useful for boosting signals in certain circuits. Finally, signal amplification is the process of converting low-level signals into higher level signals.

The working principle of the ADTC114EUAQ-13 is based on the behaviour of a BJT. A BJT is made up of three terminal, the Base (B), the Collector (C) and the Emitter (E). When a small current enters the base, it creates an amplified current between the emitter and collector. Each of these three terminals has a specific purpose.

The Base terminal is used to control the current between the emitter and collector. When a current is flowing through the Base, then the current flowing through the Collector is increased, while a lack of Base current will cause the Collector current to decrease. This is known as ”Base control of current”. The Collector terminal is where the current from the Base is collected and sent to the output. The Emitter terminal is the output of the transistor, and the current flowing through it will be the same as the Collector current.

The built in base-emitter resistor and external base resistor of the ADTC114EUAQ-13 give it extra stability. The external base resistor is used to limit the Base current, allowing for a more precise control of the Collector current. The built in base-emitter resistor is used to match the impedance of the Base and Emitter, which again helps to increase the stability of the device. This is especially beneficial when using this device in more demanding applications.

In conclusion, the ADTC114EUAQ-13 is a single, pre-biased, bipolar junction transistor (BJT) which is suitable for a variety of applications, including switching, amplifying, and signal amplification. It has a built in base-emitter resistor and external base resistor, which give it extra stability in more demanding applications. Furthermore, its working principle is based on the behaviour of a conventional BJT, using Base control of current to increase or decrease the Collector current.

The specific data is subject to PDF, and the above content is for reference

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