ADTC124ECAQ-7

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	--
Frequency - Transition:	250MHz
Power - Max:	310mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

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The ADTC124ECAQ-7 is a single pre-biased bipolar transistor (BJT) designed for a variety of applications ranging from general-purpose switching to current sensing. It belongs to the family of transistors known as first generation, which feature a c-type collector and base-collector junction resistance. The device is optimized for a wide range of operating frequencies, making it ideal for a number of applications.The ADTC124ECAQ-7 is structured in a single-ended configuration and features a high-speed base-collector reverse current. This current is used to control the current gain, which is increased at higher frequencies, while the collector voltage remains stable. This ensures a high dynamic range that works well for switching applications. Additionally, the device has a low profile and compact geometry, making it suitable for use in tight spaces.The pre-bias design of the ADTC124ECAQ-7 allows for faster transistors and higher operating speed. This allows for greater accuracy when operating at high frequencies, as the transistor is able to respond quickly to any changes in input signals. In addition, the transistor features a wide breakdown voltage of 250V, making it suitable for use in power management and high voltage applications.The working principle of the ADTC124ECAQ-7 is based on the principle of charge injection. This process involves the injection of electrons into the base region of the transistor. The injected electrons create a depletion region across the junction, which is maintained by a current bias of approximately 2mA/cm^2. The electric field created by this depletion region controls the current gain of the transistor, which is determined by the amount of injected electrons.The ADTC124ECAQ-7 is well-suited for use in a variety of applications, ranging from general-purpose switching to current sensing. Its high-speed and pre-biased design allows for greater speed, accuracy and reliability. Additionally, the high breakdown voltage and charge-injection principles utilized by the device make it a suitable choice for power management and high voltage applications.

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