ADTC114YUAQ-13 Allicdata Electronics
Allicdata Part #:

ADTC114YUAQ-13-ND

Manufacturer Part#:

ADTC114YUAQ-13

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: PREBIAS TRANSISTOR SOT323 T&R 10
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: ADTC114YUAQ-13 datasheetADTC114YUAQ-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02109
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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ADTC114YUAQ-13 is an advanced innovation in transistors that belong to the category of Bipolar (BJT) – Single, Pre-Biased. At present, this type of transistors are widely used in a variety of applications due to its unique features. This article discusses the various application fields, working principle and advantages of ADTC114YUAQ-13.

Application field of ADTC114YUAQ-13

ADTC114YUAQ-13 transistors possess a variety of useful features and this makes them suitable for a number of application fields. These include power amplifiers, automotive and consumer electronic circuits, heavy duty industrial equipment, commercial electronic devices, and medical equipment. The transistors are suitable in switching circuits, low noise preamplifiers, and audio amplifiers. Due to their wide band applications and unique features, they are widely used in military communication systems, satellite receivers, and mobile cellular phones.

Working Principle of ADTC114YUAQ-13

The working principle of ADTC114YUAQ-13 involves a single N-channel silicon switching transistor. It is designed for low current, low noise and low power applications. The transistor operates with a voltage between 3.0V and 6.5V, and can withstand a current up to 1A. It has a collector-emitter breakdown voltage of 200V and a maximum DC current gain of 40.The transistor has a low power control circuit, which reduces current consumption and enables it to operate in low current applications. The low power control circuit has an impedance level detector that helps it to detect the impedance levels of the connected circuit. The output of the transistor is dependant on the voltage and impedance levels of the connected circuit.

Advantages of ADTC114YUAQ-13

ADTC114YUAQ-13 has a wide range of advantages that make it a suitable choice for a variety of applications. Its low current consumption, low noise and low power preferences make it suitable for high precision applications, where the power requirements are low. The transistor is also fast switching, with the switching times being just a few microseconds.Additionally, the high current gain and breakdown voltage of the transistor make it suitable for high speed applications. The high collector-emitter breakdown voltage makes it suitable for applications that require high voltage levels, such as power amplifiers.Moreover, the reliability of the transistor is higher than other available options in the market, owing to its well designed construction. This makes it a good choice for industrial and military use, where reliability and robustness are required.In conclusion, ADTC114YUAQ-13 is an advanced bipolar transistor that is suitable for a variety of applications. It is especially suitable for low power, low noise, and high precision applications. Its high current gain and breakdown voltage make it well suited for high voltage and high speed applications. Moreover, its reliable construction makes it suitable for industrial and military use.

The specific data is subject to PDF, and the above content is for reference

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