AMMP-6222-TR1G

RF Amplifiers: AMMP-6222-TR1G Application Field and Working Principle

The AMMP-6222-TR1G is a microwave amplifier used in radio frequency (RF) applications. It is designed to provide high gain, low noise, and low distortions. The device can be used in a wide range of applications, including satellite communications, broadcast, cellular base station, and military and avionics. It is a monolithic integrated microwave amplifier manufactured by Avago Technologies.

The AMMP-6222-TR1G has a very low noise figure of 2dB and a gain of 18dB on the 2GHz to 26GHz frequency band. It also has a high 3dB bandwidth of 19GHz to 20GHz and a typical internal-to-output transmission loss of 0.6dB. The device is easily integrable into microwave receiver circuits and can be used as a high-gain amplifier following the first stage of amplification. The integrated design is also ideal for commercial applications.

The working principle of the AMMP-6222-TR1G amplifier is based on the combination of two microwave transistor amplifiers in series. The transistor amplifiers are biased in the non-saturated region thereby providing excellent gain and low distortion. The device also features on-board biasing which eliminates the need for additional circuitry. The internal biasing circuits monitor the inputs and regulates the output power level. This ensures an optimum signal-to-noise ratio.

The AMMP-6222-TR1G is suitable for integration into a wide variety of RF systems. It can be used in both transmitter and receiver circuits and is capable of handling a wide range of RF input power levels. The amplifier is designed to operate from a 10V supply and is available in a compact surface mount package.

In summary, the AMMP-6222-TR1G is a high performance amplifier manufactured by Avago Technologies. It is designed for use in RF applications, from 2GHz to 26GHz, and features a very low noise figure and high gain. The amplifier is easily integrable into microwave receiver circuits and features on-board biasing which eliminates the need for additional circuitry. The device is suitable for integration into a wide variety of RF systems, from 10V up to 21V.