AO5600E Allicdata Electronics
Allicdata Part #:

785-1559-2-ND

Manufacturer Part#:

AO5600E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N/P-CH 20V SC89-6L
More Detail: Mosfet Array N and P-Channel 20V 600mA, 500mA 380m...
DataSheet: AO5600E datasheetAO5600E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 380mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Description

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AO5600E is a N-Channel MOSFET array which consists of four AO3400A N-Channel MOSFETs. It is a four-terminal device which contains four independent power switches that are connected in parallel. Each power switch consists of independent gate and drain terminals and a common source terminal.

The main applications of the AO5600E include high-speed switching, transducer driver, load switching, and power supply sequencing. It is especially suited for high frequency operations such as in home appliance, telecom, and automotive electronics. This MOSFET array is suitable for applications where power losses need to be minimized and higher power efficiency is desired.

The AO5600E is particularly useful for operations that require low on-resistance and low-voltage drops. It has very low on-col resistance which is typically 0.95 ohms and gate to source voltage breakdown of -2V to + 8V. The AO5600E offers excellent high voltage and current performance, making it highly suitable for power switching applications.

The working principle behind the AO5600E is quite simple. Basically, this four-terminal device functions in the same manner as a single power MOSFET. During operations, the voltage difference between the gate and source terminals are applied and a current exits through the drain terminal, which is controlled by the resistance value. In order to maintain the current passing through the AO5600E, the gate to source voltage is kept constant. With each operation, the power switch gets turned on or off as desired.

The AO5600E MOSFET array also features a low gate charge and fast switching. As mentioned earlier, the device is suitable for operations that require high-frequency switching and with the low gate charge, the AO5600E makes it possible to reduce the operating losses and improve the power efficiency of the system. Furthermore, the fast switching capabilities of the device are essential for many high-speed operations.

In conclusion, the AO5600E MOSFET array is highly suitable for operations that require high-speed switching, transducer driver, load switching, and power supply sequencing. Its low on-col resistance, high voltage and current performance, and fast switching capabilities make it an ideal choice for many applications. In addition to its excellent performance, the AO5600E also offers low gate charge and low-voltage drop making it highly efficient in power switching applications.

The specific data is subject to PDF, and the above content is for reference

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