Allicdata Part #: | AOE6930-ND |
Manufacturer Part#: |
AOE6930 |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2 N-CH 30V 22A/85A 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 2... |
DataSheet: | AOE6930 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.58685 |
Series: | AlphaMOS |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc), 85A (Tc) |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 20A, 10V, 0.83 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA, 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V, 65nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1075pF @ 15V, 5560pF @ 15V |
Power - Max: | 24W, 75W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN (5x6) |
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AOE6930 is an array of field-effect transistors (FETs). The array consists of 9 FETs of the same type, each in its own package and each connected to an output pin. Each FET has its own supply pin, which is connected to a separate power source. This allows each FET to be driven with a different current and voltage, allowing for higher performance and improved flexibility.AOE6930s are typically used in audio applications, where their low power requirements and low cost makes them a viable option. They are also commonly used in radio frequency applications such as transmitters, receivers, and amplifiers. In these applications, the FETs can be used to switch high-frequency signals and control the frequency response of the circuit.The working principle of the AOE6930 is similar to that of other FET arrays. Each FET is controlled by the voltage applied to its gate. When the voltage across the gate is increased, the resistance between the source and the drain decreases, allowing more current to flow. This process is known as ohmic conduction. Depending on the voltage applied to the gate, the amount of current that can flow through the FET can be controlled.AOE6930s are available in both n-channel and p-channel versions. The n-channel FET array has an n-channel FET for each output pin, while the p-channel array has two FETs for each pin. Each FET has two gates, one for the drain and one for the source. The voltage applied to the gate creates a positive potential, allowing current to flow through the FET.The gates of the FETs in an AOE6930 array are controlled by a single voltage called the gate reference voltage. This voltage is usually provided by an external power source. The FETs can then be driven with any voltage between the gate reference voltage and the supply voltage. By varying the gate reference voltage, the FETs can be tuned to a range of frequencies, allowing for greater flexibility in the design of a circuit.The FETs in the AOE6930 array can be driven with the same gate reference voltage. This is called single-ended operation and is used to reduce the number of components used in a circuit. Alternatively, the FETs can be driven with different gate reference voltages, allowing for higher performance. This is called differential-ended operation.In summary, the AOE6930 is an array of FETs used in audio and radio frequency applications. The FETs are driven by a gate reference voltage and can be tuned to different frequencies depending on the voltage applied to the gate. The FETs can be driven in either single-ended or differential-ended operation and can be used to switch high-frequency signals and control the frequency response of a circuit.
The specific data is subject to PDF, and the above content is for reference
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