AOK40B120M1 Allicdata Electronics

AOK40B120M1 Discrete Semiconductor Products

Allicdata Part #:

AOK40B120M1-ND

Manufacturer Part#:

AOK40B120M1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 1200V 40A TO-247
More Detail: IGBT 1200V 80A 600W Through Hole TO-247
DataSheet: AOK40B120M1 datasheetAOK40B120M1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 3.87mJ (on), 1.25mJ (off)
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 340ns
Test Condition: 600V, 40A, 7.5 Ohm, 15V
Td (on/off) @ 25°C: 90ns/226ns
Gate Charge: 140nC
Input Type: Standard
Series: Alpha IGBT™
Power - Max: 600W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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The AOK40B120M1 is an IGBT (insulated gate bipolar transistor) that belongs to the single (non-module) transistor family. It is used in a variety of applications, ranging from computer graphics cards and audio devices to laser cutting systems and automobiles. The transistor is designed to switch high voltage at high frequencies without sacrificing accuracy. Because of this, it is often used in applications where high-speed switching and precise timing are essential.

An IGBT is a type of switching device that combines the advantages of both a bipolar junction transistor (BJT) and a field-effect transistor (FET). It is composed of a BJT and an insulated gate, which allows it to be switched on and off with a gate signal. IGBTs are commonly used in switching power supplies, uninterruptible power supply, motor control, and DC-DC converters.

The AOK40B120M1 is an industrial-grade version of the single IGBT that is designed to operate under extreme conditions. It has a high collector-emitter voltage rating of 1200V, a low saturation voltage of 2.0V, and a maximum operating temperature of 150°C. The transistor also has a high speed switching capability, allowing it to be used in applications that require precise timing and high power delivery.

The working principle of the AOK40B120M1 is fairly straightforward. When a gate voltage is applied to the transistor, it conducts current from the collector to the emitter. The gate voltage provides the gate-to-source voltage, which is necessary for the transistor to be able to operate. When the gate voltage is removed, the transistor is turned off. The collector-emitter voltage is the voltage between the collector and the emitter when the transistor is turned on. In order for the transistor to work reliably, it must be able to withstand the full collector-emitter voltage.

The AOK40B120M1 is an excellent choice for a variety of power switching applications. Its high collector-emitter voltage rating, low saturation voltage, and high speed switching capability make it suitable for use in a variety of applications where extreme conditions are likely to be encountered. It has proven to be an excellent choice for applications such as automotive applications, uninterruptible power supplies, computer graphics cards, audio devices, and laser cutting systems.

The specific data is subject to PDF, and the above content is for reference

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