AOK40N30L Allicdata Electronics
Allicdata Part #:

785-1447-5-ND

Manufacturer Part#:

AOK40N30L

Price: $ 1.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 300V 40A TO247
More Detail: N-Channel 300V 40A (Tc) 357W (Tc) Through Hole TO-...
DataSheet: AOK40N30L datasheetAOK40N30L Datasheet/PDF
Quantity: 1000
480 +: $ 1.51011
Stock 1000Can Ship Immediately
$ 1.68
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V
FET Feature: --
Power Dissipation (Max): 357W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3
Description

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AOK40N30L is an N-Channel MOSFET (metal-oxide-silicon field-effect transistor) that belongs to the AOK40N series. It has a drain-source voltage of 60V and 8A, a maximum drain current of 40A, and a maximum drain-source on-state resistance of 30mΩ. The AOK40N30L is designed for use in high-power switching and amplifier applications.

When it comes to power applications, MOSFETs are some of the most widely used semiconductor components due to their robustness and ability to efficiently control large currents. They have become even more popular with the introduction of advanced devices like the AOK40N30L, which offer extremely low on-state resistance, allowing for higher efficiency operation. In addition, the AOK40N30L offers a low gate-source leakage current and a wide range of operating temperatures.

AOK40N30L devices are also well suited for switching applications such as motor drivers and speed controllers, motor inverters, AC drivers and HVAC. Another popular use for the AOK40N30L is in amplifier circuits since they can provide a high amount of gain while using a relatively low amount of power. AOK40N30L devices are also valued for their low noise operation and high input impedance in analog circuits.

The working principle of a MOSFET can be quite complex, but it essentially has to do with the manipulation of electrons in a semiconductor material. When a voltage is applied to the gate of a MOSFET, it changes the charge on the gate electrode and allows current to flow between the source and drain. The result is an amplified flow of electrons, which gives the MOSFET its high current and power switching abilities. When the voltage is removed from the gate, the MOSFET quickly and efficiently shuts off the flow of current.

The AOK40N30L is designed for high-power operation. It has an operating voltage of -40V to +60V, a maximum drain current of 40A and a maximum drain-source on-state resistance of just 30mΩ. It also offers a low gate-source leakage current and a wide range of operating temperatures. The AOK40N30L is an excellent choice for high-power switching, amplification or motor control applications.

The specific data is subject to PDF, and the above content is for reference

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