APTJC120AM13VCT1AG

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
FET Type:	--
FET Feature:	--
Drain to Source Voltage (Vdss):	--
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	--
Operating Temperature:	--
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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The APTJC120AM13VCT1AG is an array made up of FETs or Field-Effect Transistors. These are devices that are used in digital integrated circuits and are used to control the current or voltage flow through sound transistors in digital circuits. As its name implies, this array is made up of a type of MOSFET or insulated gate field-effect transistor. A MOSFET is an insulated-gate field-effect transistor that uses a "gate" or insulated gate to control the current or voltage flow between the drain and source. The APTJC120AM13VCT1AG array utilizes the same technology in that it uses a microscopic gate to control current and voltage flow.The APTJC120AM13VCT1AG array can be used in various electronic applications and is mostly used for analog switch implementations and CMOS logic circuits. These arrays can also be used in microprocessors, memory chips, and even in aerospace and automotive applications. They are usually used in place of bipolar transistors, as they have significantly lower power consumption. These components also have a longer life span due to the fact that they have fewer moving parts and do not come into contact with any external components.The working principle of the APTJC120AM13VCT1AG array is very simple. It has one or more metal-oxide semiconductor (MOS) field-effect transistors that act as a switch. The gate of the transistor is connected to a metal layer which acts as a gate electrode. When a high-voltage signal is applied to the gate electrode, it attracts electrons, creating an inversion layer. This layer can either act as an ON state or an OFF state. The inversion layer acts as an insulating layer between the source and drain terminals. When the transistor is in the ON state, current can flow from the source to the drain. When the transistor is in the OFF state, no current flows through it. This allows the APTJC120AM13VCT1AG array to be used to switch electrical circuits on or off.In conclusion, the APTJC120AM13VCT1AG array is an array of MOSFETs which is designated to be used in analog switch implementations and CMOS logic circuits. It uses a "gate" or insulated gate to control the current or voltage flow between the source and drain. These arrays are usually used in place of bipolar transistors, as they have significantly lower power consumption and longer life spans. The working principle of the APTJC120AM13VCT1AG is straightforward, with an actively charged gate causing an inversion layer that is either in the ON state or in the OFF state.

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