APTSM120AM09CD3AG Allicdata Electronics
Allicdata Part #:

APTSM120AM09CD3AG-ND

Manufacturer Part#:

APTSM120AM09CD3AG

Price: $ 426.81
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2 N-CH 1200V 337A MODULE
More Detail: Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 337A...
DataSheet: APTSM120AM09CD3AG datasheetAPTSM120AM09CD3AG Datasheet/PDF
Quantity: 1000
100 +: $ 388.01000
Stock 1000Can Ship Immediately
$ 426.81
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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A PTSM120AM09CD3 AG is a type of transistor, specifically an array of MOSFETs, otherwise known as metal-oxide-semiconductor field-effect transistors. A MOSFET is a type of field-effect transistor (FET) that has a metal-oxide gate electrode, also known as a gate dielectric, allowing it to control the flow of electrons between the source and drain. This makes MOSFETs useful for numerous applications, including amplifying signals and switching electric power. In the case of this particular PTSM120AM09CD3 AG, it is an array of FETs on one D3- hermetic power package, with the addition of an isolation device for better performance. There are two variants of the PTSM120AM09CD3 AG, one having an isolation device that limits the current flow to 40 milliamps (mA) and the other having one with a current limited to 24mA. The former is more commonly used as it has a higher current capacity. The PTSM120AM09CD3 AG has a wide variety of applications due to its metal-oxide gate electrode, allowing it to control higher currents and voltages compared to other types of transistors. It can be used in industrial power supplies, DC-DC converters, AC-DC converters, solar power converters, DC motor controllers, and other electronic circuits.When it comes to its working principle, the PTSM120AM09CD3 AG functions by having the gate dielectric of the FETs conduct current when there is a voltage applied to the gate, allowing current to flow from the source to the drain. The MOSFET is essentially like a switch; when there is no voltage applied to the gate then the current is cut off, essentially ensuring that the gate is “closed” and no current can flow. The basic process is similar to a conventional transistor, with the additional benefit of being able to control the current and voltage better than a standard transistor.Overall, the PTSM120AM09CD3 AG is an array of MOSFETs with a wide range of applications, due to its metal-oxide gate dielectric and its current and voltage control capabilities. It is useful for industrial power supplies, DC-DC converters, AC-DC converters, solar power converters, DC motor controllers, and other electronic circuits. It has a current rating of either 24mA or 40mA, depending on the particular variant. It is also beneficial for its working principle, as it functions similar to a regular transistor but with the benefit of being able to control current and voltage better.

The specific data is subject to PDF, and the above content is for reference

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