AT21CS01-SSHM16-T Integrated Circuits (ICs)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology continues to evolve at a rapid pace, offering more features and better performance than ever before. One of the latest developments in this field is the AT21CS01-SSHM16-T, a type of flash memory designed for industrial, automotive and consumer applications. In this article, we will discuss the application field and working principle of AT21CS01-SSHM16-T.

AT21CS01-SSHM16-T is an advanced type of non-volatile NOR Flash memory. It features a 16-megabyte memory size, a fast data transfer rate of up to 18 Mbps, and low power consumption as low as 70 milliamps. This type of Flash memory is ideal for use in high-reliability applications such as automotive, industrial, and consumer applications. It is also suitable for use in memory applications that require fast data read and write speeds, such as solid state drives, digital cameras, and other storage devices.

The AT21CS01-SSHM16-T uses a four-wire connection, with an industry-standard serial peripheral interface (SPI) to carry data and commands between the memory device and the host processor. This enables the memory device to be used with a variety of microcontrollers and embedded systems. The memory can be accessed through a software SPI protocol or via an I2C interface for better performance in high-speed applications.

The AT21CS01-SSHM16-T is designed for high performance and reliability. The memory utilizes a high-speed 16-megabyte memory array, which can store up to 512 kilobits of data. The memory can be programmed with commands to support both random access and linear read and write operations. This type of Flash memory is also capable of performing complex write and erase operations, making it suitable for applications that require higher levels of reliability.

The AT21CS01-SSHM16-T Flash memory is also designed for durability and longevity. It features a high-reliability oxide nitride oxide (ONO) layer, which provides a level of protection against environmental degradation, and a non-volatile memory that will not lose its data unless exposed to extreme temperatures. The memory also has an endurance rating of up to one hundred thousand read and write cycles, making it suitable for rigorous, long-term applications.

The AT21CS01-SSHM16-T Flash memory is a cost-effective solution for memory applications that require higher data transfer speeds and reliability. It is an ideal solution for a variety of consumer, industrial, and automotive applications, making it an excellent choice for a variety of memory applications.

The specific data is subject to PDF, and the above content is for reference