AT21CS01-SSHM17-T Integrated Circuits (ICs) |
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Allicdata Part #: | 1611-AT21CS01-SSHM17-TCT-ND |
Manufacturer Part#: |
AT21CS01-SSHM17-T |
Price: | $ 0.18 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 1K I2C 125KHZ 8SOIC |
More Detail: | EEPROM Memory IC 1Kb (128 x 8) I²C, Single Wire 12... |
DataSheet: | AT21CS01-SSHM17-T Datasheet/PDF |
Quantity: | 3987 |
1 +: | $ 0.16380 |
25 +: | $ 0.15750 |
100 +: | $ 0.15120 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Kb (128 x 8) |
Clock Frequency: | 125kHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | I²C, Single Wire |
Voltage - Supply: | 1.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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AT21CS01-SSHM17-T is a non-volatile static random access memory (NVRAM) which is used in many applications that require data storage. The NVRAM offers a variety of features and advantages, making it an ideal option for applications requiring long-term storage of data. This article will discuss the general application field and working principle of the AT21CS01-SSHM17-T.
Application Field
The AT21CS01-SSHM17-T is primarily used in industrial and automotive applications. Its ability to operate at a wide range of temperatures provides the perfect solution for applications in demanding environments. Additionally, the NVRAM is well-suited to the automotive market because it has a wide range of operating temperature and has the ability to withstand harsh environment conditions.
The AT21CS01-SSHM17-T is also used in medical and communication applications due to its non-volatile feature, which allows memory contents to remain intact even when power is lost. This makes it an ideal choice for medical devices that require real-time data availability. Additionally, in communication applications, the NVRAM provides reliable storage of settings that can be quickly adjusted as required.
Working Principle
The AT21CS01-SSHM17-T is a non-volatile static random access memory that uses an N-channel MOSFET as the switch. In order to access the memory cells, the gate of the MOSFET must be addressed with a logic high signal. This is accomplished with the application of a tri-state logic circuit and address buffer. The address buffer is used to isolate the system from the switching circuitry.
Once the address of a memory cell is selected, the N-channel MOSFET is turned on and the cell is enabled. This allows the data stored in the memory cell to be read or written. Additionally, the AT21CS01-SSHM17-T provides a charge pump circuit which is used to maintain the data stored in the memory cells when the memory is in idle mode. This feature allows the memory to retain its data when power is lost.
The AT21CS01-SSHM17-T has a wide operating temperature range, which makes it ideal for use in demanding applications. Additionally, its low power consumption and small physical size make it a great option for applications where space is limited. Furthermore, its non-volatile feature ensures that data stored in the memory cells is maintained even when power is lost, making it a dependable choice for applications with critical data requirements.
In summary, the AT21CS01-SSHM17-T is an ideal choice for a variety of applications. Its wide range of features and advantages make it an excellent option for applications that require long-term storage of data. Additionally, the NVRAM’s non-volatile feature, wide operating temperature range and small physical size make it an ideal option for applications requiring real-time data availability and reliability.
The specific data is subject to PDF, and the above content is for reference
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