Allicdata Part #: | AT24C1024B-TH25-B-ND |
Manufacturer Part#: |
AT24C1024B-TH25-B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 1M I2C 1MHZ 8TSSOP |
More Detail: | EEPROM Memory IC 1Mb (128K x 8) I²C 1MHz 550ns 8-T... |
DataSheet: | AT24C1024B-TH25-B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Mb (128K x 8) |
Clock Frequency: | 1MHz |
Write Cycle Time - Word, Page: | 5ms |
Access Time: | 550ns |
Memory Interface: | I²C |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Base Part Number: | AT24C1024 |
Description
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AT24C1024B-TH25-B is a non-volatile memory device that is widely used in different applications. It is an integrated circuit that consists of 1024Kbits of EEPROM, which is electrically erasable and programmable. This makes it ideal for data storage applications such as industrial automation control and vehicular memory applications. In order to understand its application field and working principle, it is essential to have a brief understanding of the technical details of the device.The AT24C1024B-TH25-B has a 256 byte page write buffer and is organized as 128 pages of 8 bytes each. The write buffer of the device allows a burst write operation, up to 256 bytes. This means that the device can be written multiple times at different addresses within the same page. The access time for the chip is rated at 10µs, which makes it suitable for high speed data logging applications. The device also has a built in write-protect feature, allowing data storage and security in hazardous or hostile enviromnets.The AT24C1024B-TH25-B is designed to operate between a voltage range of 2.5V to 5.5V, which makes it suitable for different applications. The device is also capable of data retention for up to 10 years. The device is equipped with built-in error detection features such as ECC, which makes it reliable and secure. The device offers endurance up to 100K erase/write cycles and data retention of up to 20 years.The AT24C1024B-TH25-B is an ideal choice for applications requiring an EEPROM device that can perform fast write and read operations with excellent endurance and data retention. The device is widely used in automotive, aerospace and medical applications, as it can be programmed and reprogrammed without erasing the current data. It is also widely used in industrial control, data acquisition and industrial automation applications, as it can be accesses quickly and safely for data logging. The AT24C1024B-TH25-B device works on the principle of charge-sharing between the write and read transistors. When the write enable signal is asserted, the write transistors are activated, enabling the device to accept data. The data is stored in the floating gate. When a read enable signal is applied, it activates the read transistor, which then transfers the data stored in the floating gate back to the output bus. This process allows the device to transfer the data stored in the memory cell.Overall, the AT24C1024B-TH25-B is a popular EEPROM device that is widely used in different applications due to its excellent performance, endurance, data retention and reliability. It is perfect for applications requiring data logging and storage. The device works on the principle of charge-sharing which enables the device to transfer data stored in the memory cell.The specific data is subject to PDF, and the above content is for reference
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