Allicdata Part #: | AT24C512W110SI1.8-ND |
Manufacturer Part#: |
AT24C512W1-10SI-1.8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 512K I2C 20SOIC |
More Detail: | EEPROM Memory IC 512Kb (64K x 8) I²C 400kHz 900ns ... |
DataSheet: | AT24C512W1-10SI-1.8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 10ms |
Base Part Number: | AT24C512 |
Supplier Device Package: | 20-SOIC |
Package / Case: | 20-SOIC (0.295", 7.50mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TA) |
Voltage - Supply: | 1.8 V ~ 3.6 V |
Memory Interface: | I²C |
Access Time: | 900ns |
Series: | -- |
Clock Frequency: | 400kHz |
Memory Size: | 512Kb (64K x 8) |
Technology: | EEPROM |
Memory Format: | EEPROM |
Memory Type: | Non-Volatile |
Part Status: | Obsolete |
Packaging: | Tube |
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AT24C512W1-10SI-1.8 application field and working principle
AT24C512W1-10SI-1.8 belongs to a type of non-volatile memory known as Electrically Erasable Programmable Read-Only Memory (EEPROM). It is a type of computer memory that can be reused over and over again without losing data when the power is turned off. EEPROM is usually used for medium-term data storage and provides an ideal alternative to traditional DRAM and SRAM memory.
AT24C512W1-10SI-1.8 can be utilized in a variety of applications that require data storage and quick access. These vary from embedded systems, industrial automation, security systems, remote control systems, and consumer electronics products. It is a particularly useful memory type for applications that require frequent updates, including the ability to save and restore data across multiple power cycles.
Working Principle
AT24C512W1-10SI-1.8 utilizes a process called Fowler-Nordheim tunneling to store and retrieve data. This process works by injecting electrons from the control gate into the oxide of a transistor. By applying a certain amount of voltage, the electrons are tunneled through the oxide and redirected to an isolated node, which creates an electrical charge on the isolated node. This charge is then read out as a data bit.
The electrons can be removed from the oxide with a reverse applied voltage, and the process repeated again to store a new data bit. The length of time that it takes for the electrical charge to decay, known as "endurance", is a determining factor for the total number of times that a particular EEPROM can be reused.
Conclusion
AT24C512W1-10SI-1.8 is a highly versatile and durable form of memory that is suitable for a variety of applications, from industrial automation and remote control systems to consumer electronics products. Due to its unique working principle, it requires less energy to operate, while still providing a high level of endurance, making it a viable option for long-term data storage.
The specific data is subject to PDF, and the above content is for reference
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