AT27BV020-12JC

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EPROM
Technology:	EPROM - OTP
Memory Size:	2Mb (256K x 8)
Write Cycle Time - Word, Page:	--
Access Time:	120ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TC)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC
Base Part Number:	AT27BV020

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AT27BV020-12JC Memory

AT27BV020-12JC is a type of nonvolatile memory developed by Atmel Corporation, which is widely used in many different applications. It is a low power and low noise integrated circuit that features a two-transistor (Source-Follower) memory cell. This particular memory has several advantages such as low power consumption, fast program/erase speed and a wide temperature operating range. The AT27BV020-12JC is a parallel interface memory, meaning that data is transferred between a host device and the memory in words. Each word is 8 bits in size, and the AT27BV020-12JC can store up to 16K x 8 bits of data, or 128Kb of data. The memory is organized as a sequence of 16K x 8-bit blocks, with each block having its own separate write enable, data enable and programming enable signals. The AT27BV020-12JC is a popular choice in applications that require long term data storage. This memory is usually used in applications such as code hoarding, data logging, industrial and consumer data logging, remote settings, radio communications, automotive and aerospace applications.

Working Principle of AT27BV020-12JC

The AT27BV020-12JC is a non-volatile memory which can store data even without power. It stores data using a two-transistor memory cell which works on the principle of Fowler-Nordheim tunneling. In this type of memory, when a positive write signal is applied, electrons are tunneled from the source to the drain. This creates an area of negative charge near the drain and a corresponding area of positive charge near the source, which serves as the memory cell that stores the digital data. When a read signal is applied, the potential of the source is quickly measured and the associated data is retrieved from the memory cell. The read signal does not affect the stored data, so the data can be read multiple times without damaging it.The AT27BV020-12JC also has a built-in self-erase function which allows the memory to be erased at the same time it is being programmed. This feature simplifies the programming process by eliminating the need to erase the memory before programming it.

Advantages of AT27BV020-12JC

The AT27BV020-12JC offers several advantages which make it a popular choice for many different applications. These advantages include low power consumption, fast program/erase speed, wide temperature range (from -40 to +85 Celsius), low noise and small size. Moreover, it is an excellent choice for design flexibility as it can be easily modified to support multiple voltage levels. Another benefit of the AT27BV020-12JC memory is its reliability. It is built with robust design guidelines that ensure its data is stored stably and securely. Furthermore, the self-erase feature allows data to be easily erased and reprogrammed, which makes it suitable for use in mission-critical applications.

Conclusion

The AT27BV020-12JC is a type of non-volatile memory which is used in many different applications. It is based on the principle of Fowler-Nordheim tunneling and utilizes a two-transistor memory cell to store data. It is a low power and low noise integrated circuit that features a two-transistor memory cell and can store up to 16K x 8 bits of data. The AT27BV020-12JC offers several advantages such as low power consumption, fast program/erase speed, wide temperature range, low noise and small size, making it an excellent choice for many different applications.

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