| Allicdata Part #: | AT27C4096-90JU-TTR-ND |
| Manufacturer Part#: |
AT27C4096-90JU-T |
| Price: | $ 3.44 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Microchip Technology |
| Short Description: | IC EPROM 4M PARALLEL 44PLCC |
| More Detail: | EPROM - OTP Memory IC 4Mb (256K x 16) Parallel 90... |
| DataSheet: | AT27C4096-90JU-T Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 3.12121 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | EPROM |
| Technology: | EPROM - OTP |
| Memory Size: | 4Mb (256K x 16) |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 90ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 85°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 44-LCC (J-Lead) |
| Supplier Device Package: | 44-PLCC |
Description
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AT27C4096-90JU-T MemoryThe AT27C4096-90JU-T memory is a type of integrated circuit (IC) that is widely used in the fields of embedded systems, robotics, gaming, automotive, and the Internet of Things (IoT). It is a versatile and reliable memory device that combines a single 4K × 8-bit (8192 bytes) memory bank and an EEPROM cell with an address space of 16K × 8-bits (16384 bytes). It is an ideal solution for various applications that require low-power, high-density, random access memory devices.The AT27C4096-90JU-T is a CMOS product. It is designed to provide a low-power and highly reliable memory solution for embedded and microcontroller applications. The device supports dynamic random access memory (DRAM) operation, thereby allowing for fast and efficient operation. It is also equipped with an industry-standard interface, making it compatible with most embedded controller designs.The working principle of the AT27C4096-90JU-T memory device is fairly simple. Its memory bank is organized as 8K x 8-bits (8192 bytes) and is arranged in 512 rows. When an address is read from the device, the first location stores the least-significant byte, and the following seven locations comprise the most-significant byte of the word. Each row contains eight bits, and each row can store up to eight bytes.The AT27C4096-90JU-T utilizes a Dynamic RAM (DRAM) cell structure, which consists of an access transistor (M1) and two dynamic RAM cells (M2 and M3). When the select signal (S0) is asserted (high), the M1 access transistor will turn on, and the charge stored in the Dynamic RAM cells (M2 and M3) is then transferred to the output line (Q1). The output line (Q1) is then connected to the controller logic circuit, which will then process the data read from the device.The AT27C4096-90JU-T can be used in a wide range of embedded application, such as automotive, gaming, robotics and IoT applications. It is suitable for applications that require low power consumption and high density of random access memory. The device is also characterized by its high reliability and fast operation. In addition, the AT27C4096-90JU-T is compatible with most embedded controller designs, making it an ideal solution for various embedded system designs.The specific data is subject to PDF, and the above content is for reference
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AT27C4096-90JU-T Datasheet/PDF