Allicdata Part #: | AT28C010E-12FM883-ND |
Manufacturer Part#: |
AT28C010E-12FM/883 |
Price: | $ 222.57 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 1M PARALLEL 32FLATPCK |
More Detail: | EEPROM Memory IC 1Mb (128K x 8) Parallel 120ns 32... |
DataSheet: | AT28C010E-12FM/883 Datasheet/PDF |
Quantity: | 1000 |
15 +: | $ 202.33400 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 10ms |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -55°C ~ 125°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 32-CFlatpack |
Supplier Device Package: | 32-Flatpack, Ceramic Bottom-Brazed |
Base Part Number: | AT28C010 |
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As the capacity of integrated circuit memories increases, the number of memory styles and associated features grows. The AT28C010E-12FM/883 belongs to the classification of memory known as EEPROMs or Electrically Erasable Programmable Read-Only Memories. This type of memory differs from EPROMs, which require exposure to ultraviolet light for erasure, and ROMs, which are not erasable and can only be programmed once. EEPROMs offer a compromise between the volatile RAMs and ROMs.
Application Field
The AT28C010E-12FM/883 is a powerful but inexpensive memory device that is designed to be suitable for a variety of applications. It is commonly used in automotive, eletronic instrument making, security applications, contol systems, and computer design. The device provides users with 45ns access time and low power consumption. Furthermore, it can operate over the temperature range of -40 °C to +85 °C.
Working Principle
An EEPROM is a nonvolatile memory device that can be programmed and erased with electrical pulses. The AT28C010E-12FM/883 is built with CMOS technology and uses charge-pump circuits for programming and erasing. The electrical pulses applied to the memory cells cause the memory cell to be programmed or erased. Information written to the memory cells is retained even in absence of power.
Programming
Programming an EEPROM involves writing data into the memory. Some EEPROMs require a special program algorithm to write data to the memory, while other EEPROMs allow the user to directly write data to the memory without any special algorithm. The AT28C010E-12FM/883 allows the user to write data directly to the memory. To program the AT28C010E-12FM/883, the user applies a programming voltage between 4.5 and 7.0 volts. A high voltage is applied to the program line and data is written to the memory cell.
Erasing
Erasing an EEPROM involves blowing away the data that is stored in the memory cells. Some EEPROMs require a special algorithm to erase the memory, while other EEPROMs allow the user to directly erase the memory without any algorithm. The AT28C010E-12FM/883 allows the user to erase the memory directly. To erase the AT28C010E-12FM/883, the user applies a voltage of 11.0 volts between the programline and the ground. This causes electrons to be removed from the memory cell, erasing the data.
Conclusion
The AT28C010E-12FM/883 is a type of EEPROM that has been designed to be suitable for a variety of applications. It offers a fast access time and low power consumption. It can be programmed and erased directly with no algorithm required. It is a powerful but inexpensive memory device that can be used in many applications such as automotive, eletronic instrument making, security applications, contol systems, and computer design.
The specific data is subject to PDF, and the above content is for reference
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