AT28LV64B-25JC

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	64Kb (8K x 8)
Write Cycle Time - Word, Page:	10ms
Access Time:	250ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TC)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC
Base Part Number:	AT28LV64

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Memory: AT28LV64B-25JC Application Field and Working Principle

The AT28LV64B-25JC belongs to the AT28 family of non-volatile flash memories and is widely used for storing various types of data. It is a low power, low voltage and high-performance memory. This part of the memory provides greater flexibility and excellent performance to the user. This memory is also cost-effective and is widely used in many different applications.

The AT28LV64B-25JC non-volatile flash memory is composed of two independent internal EEPROM configured in a dual bank system. It is also composed of two sectors of separate write protection blocks and two separate block write protection blocks. Both the EEPROM and the flash memory have the same 8-bit parallel addressing and an enlarged four-slave-select (FSS) mode.

The AT28LV64B-25JC non-volatile flash memory provides an extensive application field. It is primarily used in systems comprising of parts such as microcontrollers and CPUs where data storage and manipulation functions are required. It can also be used in communication systems such as DSL, cable modem, WSAN and audio systems. Furthermore, AT28LV64B-25JC can be used in home networking products, set-top boxes and GPS receivers. It is also used as external storage media for video surveillance systems.

The AT28LV64B-25JC non-volatile flash memory is specially designed for low-vibration and embedded applications. It offers a wide range of features such as a two- byte internal page write buffer, low-power operation, extended data read, write and erase operations, verified write mode and various wait states. The flash memory also provides a fast Erase/Write cycle capability with a maximum page write speed of 2µs.

The AT28LV64B-25JC non-volatile flash memory works on a simple working principle. When the write enable latch pin is activated, data is transferred to the internal data latch (D-Latch). The data stored in the internal data latch is then transferred to the internal Program/Erase (PROG/E) block. Once the internal PROM/E block is programmed, the data is then transferred to the memory array. The programmed memory can be read back later by the user. The flash memory can also be read using random access and multiplexed mode.

The AT28LV64B-25JC non-volatile flash memory also supports data protection through write protection blocks. These write protection blocks provide an additional layer of security to ensure that data written in the memory is not lost or corrupted. The flash memory also features a Refresh option that allows data to be refreshed to ensure data integrity. The flash memory also has various built-in enhanced features such as Byte/Page read, write, erase and verify operations. This helps the user to easily program and erase data in the AT28LV64B-25JC memory.

The AT28LV64B-25JC non-volatile flash memory provides great flexibility and performance. It is cost-effective and widely used in many different applications. This part of the memory offers many features such as multiple write protection blocks and a Refresh option that ensures data integrity. The AT28LV64B-25JC non-volatile memory also offers a fast Erase/Write cycle and multiple access options that make it easy to program and erase data.

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