AT28LV256-25PI Allicdata Electronics
Allicdata Part #:

AT28LV256-25PI-ND

Manufacturer Part#:

AT28LV256-25PI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 256K PARALLEL 28DIP
More Detail: EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 2...
DataSheet: AT28LV256-25PI datasheetAT28LV256-25PI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 10ms
Access Time: 250ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP
Base Part Number: AT28LV256
Description

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AT28LV256-25PI application field and working principle

AT28LV256-25PI is a memory device from a series of AT28 series developed by Atmel Corporation. It is a low-power, high performance CMOS 8-bit microcontroller with fully static operation, advanced RISC architecture and reduced power consumption compared to other products of the same type.

Application Field:

AT28LV256-25PI can be widely used in automotive, automotive body control modules, industrial automation, industrial and medical equipment, GPS systems, data acquisition systems, electronic instruments, toys, home appliances and other areas.

AT28LV256-25PI is especially suitable for applications requiring real-time communication such as automotive, industrial and medical devices.

Working principle:

The work of AT28LV256-25PI is the process of data storage and retrieval by using the non-volatile memory which is based on EEPROM technology. When data is stored in the memory, it is written in both the common memory cell array and the serial interface area.

The data is first stored in the common memory cell array by the EDI (Electronic Debug Interface) circuit and the memory cell is written with the corresponding data value. After the write operation, the EDI circuit will check the value in the memory cell to ensure that it is correct. After the EDI circuit has finished the read and write operations, the memory map will be updated. Finally, the data is written into the serial interface area.

When the data is retrieved from the memory, the EDI circuit will first read the data from the common memory cell array, and then read the data from the serial interface area. Then it will compare the read data to ensure that the retrieved data is correct. After that, the EDI circuit will update the memory map.

The specific data is subject to PDF, and the above content is for reference

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