AT28LV64B-20SC Allicdata Electronics
Allicdata Part #:

AT28LV64B-20SC-ND

Manufacturer Part#:

AT28LV64B-20SC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 64K PARALLEL 28SOIC
More Detail: EEPROM Memory IC 64Kb (8K x 8) Parallel 200ns 28-...
DataSheet: AT28LV64B-20SC datasheetAT28LV64B-20SC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC
Base Part Number: AT28LV64
Description

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Memory devices are ubiquitous in modern computer systems, providing a type of permanent storage for large amounts of data. One such device is the AT28LV64B-20SC, a low-power, nonvolatile 64-Kbit static RAM (SRAM) memory device. This device combines high-speed operation with low-power consumption, and provides an ideal solution for applications such as data buffering and communications. In this article, we will discuss the application field and working principle of the AT28LV64B-20SC.

The AT28LV64B-20SC is typically used in industrial and instrumentation equipment, such as telecommunications systems, medical imaging systems, and automotive control. It can be used to store data or software such as incoming and outgoing messages, alarms, process control parameters, and test data. It is also ideal for data buffering and communications in applications such as modems, printers, and disk drives.

The AT28LV64B-20SC is designed for low-power operation, operating from a single 3.3V VDD supply. The device has a static design, which means it does not need to be periodically refreshed, and can maintain data retention of up to 10 years. It is also fast, with cycle times of 20 ns per word allowing up to 32-word reads and writes. The device also has a wide range of output drive options, allowing it to be used in a variety of configurations.

The AT28LV64B-20SC is a Static Random Access Memory (SRAM) device and works on the same principles as Dynamic RAM (DRAM). The data is stored in a matrix of cells, each containing a voltage that represents either a 0 or 1. A matrix of transistors and capacitors is used to store these voltages. When a memory address is selected, the voltage in the corresponding cell is sensed by a sense amplifier and the data is presented at the output. The device is able to retain the data without needing to be periodically refreshed.

The AT28LV64B-20SC is also able to perform self-timed write operations using a two-transistor write driver circuit. This circuit allows data to be written to the memory without the need for an external clock pulse. It also allows the device to be used in a wide range of applications, as the write operations can be started at any time, regardless of when the address was selected.

In conclusion, the AT28LV64B-20SC is a low-power, nonvolatile SRAM memory device ideal for applications such as data buffering and communications. It is fast and can maintain data retention of up to 10 years. The device has a static design, allowing it to perform self-timed write operations, making it suitable for a wide range of applications. It is also designed for low-power operation, making it ideal for use in devices that require long battery life.

The specific data is subject to PDF, and the above content is for reference

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