Allicdata Part #: | AT28C16E-15JC-ND |
Manufacturer Part#: |
AT28C16E-15JC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 16K PARALLEL 32PLCC |
More Detail: | EEPROM Memory IC 16Kb (2K x 8) Parallel 150ns 32-... |
DataSheet: | AT28C16E-15JC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 16Kb (2K x 8) |
Write Cycle Time - Word, Page: | 200µs |
Access Time: | 150ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | AT28C16 |
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The AT28C16E-15JC is a 16K-bit low power CMOS electrically-erasable programmable read-only memory (EEPROM) device. This electrically-erasable memory is organized as two independent 8K memory blocks, section A and section B and each section is further organized as 1K pages with 16 words per page. This device belongs to the Memory category.
The AT28C16E-15JC can be used in a wide range of applications such as data storage, data transfer, and portable data storage. It is also suitable for wide dynamic range applications, low power systems, and high reliability systems. The memory is also suitable for applications where program and data memory space is limited.
The AT28C16E-15JC has a wide operating temperature range from -40°C to +85°C. It has advanced low voltage and standby power modes, low power consumption, and data retention of up to 10 years. The device has a Page Write operation and a Low Voltage Write Enable mode, which allows for low current device programming.
The AT28C16E-15JC device has a traditional EEPROM technology for accessing and writing data. The EEPROM consists of an array of cells, each one containing one bit of data, organized in groups of 8 cells each. Each cell has a transistor to store the data bit, and each cell can be programmed and erased using an erase/program voltage. The EEPROM can be read using the access voltage (VCC).
The AT28C16E-15JC has a Page Write operation and a Low Voltage Write Enable (LVWE) mode, which allows for low current device programming. In the LVWE mode, the devices can be programmed at a current of 2mA, and the devices can be erased at a current of 5mA.
The AT28C16E-15JC also has a number of protection features such as write protect, read protection, auto-protect, and write lockdown. The write protect feature allows the user to lock specific memory locations from accidental programming. The read protection feature protects the contents of the memory from accidental reading operations. The auto-protect feature prevents writing to the device during an accidental write operation. The write lockdown feature can be used to permanently lock specific memory locations from unauthorized programming.
Overall, the AT28C16E-15JC is a low-power and great Flash memory device suitable for a wide range of applications requiring data storage, data transfer, and portable data storage. Its inherent features such as low voltage programming, page write, and read/write/erase protection make it an ideal choice for low power and high reliability systems.
The specific data is subject to PDF, and the above content is for reference
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