AT28C16E-20JC

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	200µs
Access Time:	200ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TC)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC
Base Part Number:	AT28C16

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Introduction AT28C16E-20JC is a 16 Kbit(2K bytes) Electrically Erasable Programmable Read Only Memory (EEPROM). The EEPROM is based on advanced CMOS technology that permits the device to be reprogrammed and erased in-circuit many times without removing the device from its mounting socket. Application FieldAT28C16E-20JC can be used in a wide variety of computer and peripheral applications, including power management, system setup, user identification, and security verification (such as encryption and authentication). It can also find applications in applications where data retention and endurance are critical, such as memory cards, instrumentation, and industrial process control.FeaturesAT28C16E-20JC provides the following features: • 16 Kbit, 2K byte • 1.8V/2.7V/3.3V/5V low voltage and standard voltage options • 1 - 50 MHz read, write and erase operations • Low power CMOS technology • High endurance with 100,000 erase/write cycles • Protect data retention of over 20 years • 100 ns (10MHz) read and write access time • 100μs erase time• DC characteristics specified over voltage and temperature rangesPackage TypesAT28C16E-20JC is available in the following packages: • 20-pin DIP • 20-pin SO • 20-pin PZIP • 20-pin PLCCBus OrganizationAT28C16E-20JC contains a 20-bit address bus, an 8-bit bidirectional data bus, an enable control signal and four control signals. Figure 1 shows the pinouts and Figure 2 shows the block diagram of the device.

Figure 1: AT28C16E-20JC Pinouts

Figure 2: AT28C16E-20JC Block Diagram

Working PrincipleAT28C16E-20JC uses a floating-gate EEPROM technology. The charge trapping and erasing process is based on Fowler-Nordheim (FN) tunneling. FN tunneling is an electron-emission technique that utilizes an applied electric field to accelerate an electron from a low energy state into a semiconductor material at a specific energy level. This energy causes an electron to tunnel through the barriers of an oxide layer and arrive at an bulk stored charge on the other side of the oxide. This floating gate can then be read or written to by using electrical charge injection techniques. Writing and erasing are enabled by the placement of additional transistors between the memory cell array and control logic. These transistors allow the application of positive or negative power to the desired memory cells when in a write or erase cycle. This process is orchestrated by the internal set-up logic and control timing which is designed to ensure safe and reliable operation under a wide range of operating conditions. The device requires the application of only a single 5V (or other supply) and no additional external programming voltages. It also includes a built-in software controlled self-timed write cycle that initiates and terminates automatically. The data being written during the write cycle is protected from accidental corruption, as this data is tested for validity before being written. Congratulations are extended to the user for successfully writing data to the device.ConclusionAT28C16E-20JC is a 16Kb Electrically Erasable Programmable Read Only Memory device that is based on advanced CMOS technology. This EEPROM device can be used for a variety of computer and peripheral applications and features high endurance, data retention and fast read/write speeds. The device is available in multiple packages and utilizes floating-gate EEPROM technology for reading, writing and erasing memory. The device requires only a single 5V supply and also includes a built-in software controlled self-timed write cycle.

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