AT28HC256F-90JC

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	256Kb (32K x 8)
Write Cycle Time - Word, Page:	3ms
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TC)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC
Base Part Number:	AT28HC256

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AT28HC256F-90JC Application Field and Working Principle

Introduction

AT28HC256F-90JC is a low-power, high performance CMOS 8K x 8 static RAM. It is organized as 8K words by 8 bits, and is fabricated using advanced CMOS technology by Atmel Corporation. The AT28HC256F-90JC has low standby current which makes it ideal for battery operated systems. Various memory operations such as random read and write, chip select, and write protect are controlled by the logic states of their respective OE, CE, and WP pins. In addition, the AT28HC256F-90JC features an active-low output enable that removes the output from the bus.

Memory

AT28HC256F-90JC is classified under Memory. A memory is a device used to store and retrieve digital information. It is the primary resource in a computer and is responsible for the storage of data, information and instructions accessed by the processor. Memory can be divided into two categories: RAM (Random Access Memory) and ROM (Read-Only Memory). RAM stores temporary information that the CPU needs to access quickly and ROM stores non-volatile information that stays in memory even when the power is turned off.

AT28HC256F-90JC Application Field

The AT28HC256F-90JC is used in a variety of systems such as notebook and laptop PCs, programmable logic controllers, industrial/process control systems, embedded applications, and medical/scientific instruments. It is used for storing code and data in battery operated applications.

Working Principle

AT28HC256F-90JC RAMs work with two out of eight address lines (A1-A8) which correspond to 8K words, enabling the system to address 8K bytes (8 bits x 8K words). The other six address lines (A9-A14) correspond to 256 words, enabling system to address 256 bytes (8 bits x 256 words). Since the RAM can access 8K bytes by using 8 address lines and can access 256 bytes by using 6 address lines, the RAM can be effectively used in an array of applications. The memory device consists of a static memory cell array, address buffers, output buffers, an address latch and control logic. The static cell consists of MOS transistors, arranged in an array of rows and columns. Each cell can store a bit of information. When the memory cell is addressed, the output can be read from the appropriate output line.To read data from the RAM, the CPU issues an address, which is stored in the address counter. The address is latched into the RAM from the address buffers and the required data is accessed from the memory cell array. The data is stored in the output buffers and is available at the data output pins.

Conclusion

The AT28HC256F-90JC is a low-power, high-performance CMOS 8K x 8 static RAM. It is perfect for battery operated systems, as well as notebook and laptop PCs, programmable logic controllers, industrial control systems, embedded applications, and medical/scientific instruments. Its low standby current makes it ideal for low-power applications. Its working principle is based on static memory cell array, address buffers, output buffers, an address latch and control logic. The AT28HC256F-90JC can be efectively used in a variety of applications due to its ability to access both 8K words and 256 words by using respectively 8 and 6 address lines.

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