AT28LV010-20JU-051 Allicdata Electronics
Allicdata Part #:

AT28LV010-20JU-051-ND

Manufacturer Part#:

AT28LV010-20JU-051

Price: $ 20.94
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 1M PARALLEL 32PLCC
More Detail: EEPROM Memory IC 1Mb (128K x 8) Parallel 200ns 32...
DataSheet: AT28LV010-20JU-051 datasheetAT28LV010-20JU-051 Datasheet/PDF
Quantity: 24
1 +: $ 19.03230
Stock 24Can Ship Immediately
$ 20.94
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC
Description

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Memory is an important component in all sorts of embedded computing platforms. The AT28LV010-20JU-051 is a widely used memory solution for many of these systems. This article will discuss the application fields and working principle of the AT28LV010-20JU-051.

The AT28LV010-20JU-051 is a Flash Memory Integrated Circuit (IC) which utilizes a Multi Level Memory Cell (MLC) technology. It is manufactured with Advanced Local Power Management (ALPM) and complies with the JEDEC Flash Standard. It contains a total of 128,000 bytes in its 1 Mbit capacity, allowing the device to store information while reducing power consumption.

The AT28LV010-20JU-051 is primarily used in industrial and embedded applications. It is ideal for use in data loggers, medical and industrial instrumentation, automotive and aerospace systems, and other small form-factor applications. Its superior robustness and long-term reliability make it suitable for long-term storage and retrieval of critical information.

The working principle of the AT28LV010-20JU-051 is based on Multi-Level Cell (MLC) technology. This technology allows the device to store multiple levels of information in each memory cell using varying levels of charge. This maximizes the amount of data that can be stored in a single cell. The device also uses Error Correction Code (ECC) to reduce errors during read and write operations. This ensures that only valid data is written to the device and read from it.

The AT28LV010-20JU-051 utilizes an advanced local power management system, which reduces power consumption. This power management system is able to dynamically adjust the current used by the memory device, depending on the data which is being processed. By doing this, the device is able to maintain an optimal level of power efficiency while still being able to process data efficiently.

In addition to its multi-level cell technology and advanced local power management system, the AT28LV010-20JU-051 also uses Poly-SiON (PSON) technology. This technology is used to reduce the number of pins required to control the device, as well as to provide the device with the capability to sense pushbutton inputs.

Finally, the AT28LV010-20JU-051 also supports hardened sector protection. This feature allows the device to protect up to 8 banks of data against accidental erasure or write operations. It also provides the ability to lock sectors, allowing the device to remain secure against unwanted access.

In conclusion, the AT28LV010-20JU-051 is an ideal memory solution for industrial and embedded applications. It utilizes multi-level cell technology, advanced local power management, and hardened sector protection to ensure maximum data integrity, reliability, and long-term storage. The AT28LV010-20JU-051 offers users a cost-effective memory solution for their system needs.

The specific data is subject to PDF, and the above content is for reference

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