AT29C512-15TC Allicdata Electronics
Allicdata Part #:

AT29C512-15TC-ND

Manufacturer Part#:

AT29C512-15TC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 512K PARALLEL 32TSOP
More Detail: FLASH Memory IC 512Kb (64K x 8) Parallel 150ns 32...
DataSheet: AT29C512-15TC datasheetAT29C512-15TC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: 10ms
Access Time: 150ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: AT29C512
Description

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The AT29C512-15TC is a type of 512K-bit CMOS CMOS Electrically-Erasable Programmable Read-Only Memory (EEPROM) and is frequently used for a wide range of applications, such as memory storage, data logging, digital signal processing, and microprocessor systems. This type of memory has a good read/write endurance and is designed to have a maximum memory read/write cycle of one million cycles. It is mainly suitable for non-volatile and personal applications.

The AT29C512-15TC offers excellent memory performance and integration for embedded systems. This type of memory is available in a 5V supply and offers read/write times of 8ms maximum. The memory can be used at temperatures ranging from -40°C to 85°C and is packaged in a 28-pin plastic dual-in-line package (PDIP) and a 32-pin SOIC package. The chip is also offered with a secured erase feature.

The main features of the AT29C512-15TC include 512K-bit of memory storage capacity, a maximum read/write speed of 1M cycles/second, high-speed read/write, and an erase cycle. It also provides an External Timer for Memory Programming, improved data retention, and a low write current. The chip architecture is divided into four separate banks, each of which contains 128k-bit of memory and an address register.

The working principle of the AT29C512-15TC is based on the EEPROM technology. The chip uses Fowler–Nordheim tunneling for writing data. This is done by applying a voltage across the control gate and the floating gate, which induces electrons to tunnel from the floating gate to the control gate. When writing is finished, the control gate is then electrically discharged to ground, effectively trapping the electron in the floating layer. This creates a charge imbalance which results in the memory cell being charged. When the memory is then read, a voltage is applied to the control gate, which generates an electric field which is then read by an external component.

The AT29C512-15TC can be used in a wide range of applications. It is particularly suitable for use in automotive applications, industrial systems, and communication systems. It is excellent for use in battery-backed application, as it offers an excellent erase life. This type of memory is also suitable for use in portable applications, such as PDAs, and digital cameras. The chip can also be used in non-volatile and personal applications, such as medical equipment.

The AT29C512-15TC is an excellent choice for applications that require a low-power, high-capacity EEPROM memory. With its excellent performance and features, it can be used in a variety of applications and is an excellent choice for embedded systems.

The specific data is subject to PDF, and the above content is for reference

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