Allicdata Part #: | AT29LV020-20TC-ND |
Manufacturer Part#: |
AT29LV020-20TC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 2M PARALLEL 32TSOP |
More Detail: | FLASH Memory IC 2Mb (256K x 8) Parallel 200ns 32-... |
DataSheet: | AT29LV020-20TC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 2Mb (256K x 8) |
Write Cycle Time - Word, Page: | 20ms |
Access Time: | 200ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 32-TSOP |
Base Part Number: | AT29LV020 |
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AT29LV020-20TC is a 2Mbit (256K x 8) CMOS 3.0 Volt only Flash memory technology. The chip is manufactured using a deep submicron CMOS process and is based on Advanced Micro Devices (AMD) Flash memory architecture. It offers a high speed access time of 20ns, which is twice as fast as 4Mbit devices. The device is designed to be rewritten up to 100,000 times without data loss.
The AT29LV020-20TC utilizes a high density non-volatile Flash memory array with three programmable level EPROM cells. The memory array is organized as 16 sectors with each sector containing up to 256K bytes, which can be accessed in byte-level increments without losing any of the data. All sectors are electrically erasable, reprogrammable and compatible with a host of digital control and communication interfaces. It is available in both the standard SOIC and TSSOP packages.
AT29LV020-20TC applications include code storage for embedded systems, data storage for systems with limited operating memory, boot code/application code/data storage for personal computers and other systems, and memory storage for compact disk-read-only memory (CD-ROM) and digital video disk (DVD) players. The device can also be used in medical and automotive applications demanding reliable, high density memory solutions.
The working principle of the AT29LV020-20TC includes the use of three different levels of erase and write operations: erase, write and verify. During the erase cycle, all programmable bits are erased to a "1." During the write cycle, the system can write data to the memory array in byte increments. Lastly, during the verify cycle, the system uses an error detection algorithm to verify the programming of the memory array. This ensures that the programmed data is valid.
AT29LV020-20TC Flash memory offers a range of advantages over traditional types of memory such as EEPROM and ROM. First, since the Flash cells can be programmed and erased many times over, the device can be used for frequently changing data or code. Second, the device is easy to use and program, and offers a high degree of reliability in both reading and writing. Third, the device can easily be upgraded to handle more data and functions. Finally, the device is highly power efficient, which makes it suitable for use in battery operated applications.
AT29LV020-20TC Flash memory offers a wide array of features and benefits, making it an ideal choice for embedded systems, data storage and code storage applications. Its fast access time, low power consumption and high erasing and writing speed make it an attractive solution for many applications. Its user friendly programming and verification cycle further enhance its usability and make it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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