AT49F002-55VC Allicdata Electronics
Allicdata Part #:

AT49F002-55VC-ND

Manufacturer Part#:

AT49F002-55VC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 2M PARALLEL 32VSOP
More Detail: FLASH Memory IC 2Mb (256K x 8) Parallel 55ns 32-V...
DataSheet: AT49F002-55VC datasheetAT49F002-55VC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 50µs
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP
Base Part Number: AT49F002
Description

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The AT49F002-55VC is a static RAM device really popular for its versatility and wide range of applications in the memory segment. It is a programmable, 8-bit non-volatile Static RAM. These devices are used for storage and write protection of codes with double-bytes and commands. It comes in a variety of packages like PQFP, PLCC, MQFP and SOIC, based on the application. The architecture of this device follows NAND cell organization and the structure is made up of a single chip RAM array with 1024 words of 8-bits each. Two different schematics are available for the resolution of multiple byte reads and commands, and read and write functions. This makes it a perfect choice for industrial, military and commercial applications.

The AT49F002-55VC memory device’s scratch-pad memory capacity consists of 1024 words of 8-bits each and has a write protection capacity that guards against data corruption. This also allows operation of the device at an optimal voltage, providing improved power saving and long-term data retention. Besides, the standard-cell architecture, with an access time of 55 ns, makes it an ideal candidate for applications with high speed, wide-range RAM requirements.

The application-field of this memory device ranges from embedded medical and industrial applications to security systems and pen controller systems. The AT49F002-55VC can be used as an enabling element for manufacturing test equipment, signal processing and conditioning. The device displays enhanced performance with its NAND-cell organization, low power-consumption, high-speed access, operation at an optimal voltage and long-term data retention.

The working principle of the AT49F002-55VC is based on the NAND-cell architecture. When the chip is fored into a NAND configuration, it is an array of binary cells, each cell consisting of two series-connected transistors and a tied-together node (in between the two series-connected transistors) connected to a bit line. The WORD lines thus generate the address and control the write/read operations. The output of the data is determined by the history of the input data, depending on parity bits and dummy bits.

The AT49F002-55VC is a very versatile device that finds its application in various consumer and industrial segments. The device exhibits capability of storing and protecting data from corruption with its write-protection feature and supports faster access time with its NAND-cell organization. It is an ideal candidate for applications with high-speed, wide-range RAM requirements.

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