| Allicdata Part #: | AT49F002-55VC-ND |
| Manufacturer Part#: |
AT49F002-55VC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Microchip Technology |
| Short Description: | IC FLASH 2M PARALLEL 32VSOP |
| More Detail: | FLASH Memory IC 2Mb (256K x 8) Parallel 55ns 32-V... |
| DataSheet: | AT49F002-55VC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH |
| Memory Size: | 2Mb (256K x 8) |
| Write Cycle Time - Word, Page: | 50µs |
| Access Time: | 55ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | 0°C ~ 70°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 32-TFSOP (0.488", 12.40mm Width) |
| Supplier Device Package: | 32-VSOP |
| Base Part Number: | AT49F002 |
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The AT49F002-55VC is a static RAM device really popular for its versatility and wide range of applications in the memory segment. It is a programmable, 8-bit non-volatile Static RAM. These devices are used for storage and write protection of codes with double-bytes and commands. It comes in a variety of packages like PQFP, PLCC, MQFP and SOIC, based on the application. The architecture of this device follows NAND cell organization and the structure is made up of a single chip RAM array with 1024 words of 8-bits each. Two different schematics are available for the resolution of multiple byte reads and commands, and read and write functions. This makes it a perfect choice for industrial, military and commercial applications.
The AT49F002-55VC memory device’s scratch-pad memory capacity consists of 1024 words of 8-bits each and has a write protection capacity that guards against data corruption. This also allows operation of the device at an optimal voltage, providing improved power saving and long-term data retention. Besides, the standard-cell architecture, with an access time of 55 ns, makes it an ideal candidate for applications with high speed, wide-range RAM requirements.
The application-field of this memory device ranges from embedded medical and industrial applications to security systems and pen controller systems. The AT49F002-55VC can be used as an enabling element for manufacturing test equipment, signal processing and conditioning. The device displays enhanced performance with its NAND-cell organization, low power-consumption, high-speed access, operation at an optimal voltage and long-term data retention.
The working principle of the AT49F002-55VC is based on the NAND-cell architecture. When the chip is fored into a NAND configuration, it is an array of binary cells, each cell consisting of two series-connected transistors and a tied-together node (in between the two series-connected transistors) connected to a bit line. The WORD lines thus generate the address and control the write/read operations. The output of the data is determined by the history of the input data, depending on parity bits and dummy bits.
The AT49F002-55VC is a very versatile device that finds its application in various consumer and industrial segments. The device exhibits capability of storing and protecting data from corruption with its write-protection feature and supports faster access time with its NAND-cell organization. It is an ideal candidate for applications with high-speed, wide-range RAM requirements.
The specific data is subject to PDF, and the above content is for reference
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AT49F002-55VC Datasheet/PDF