AT93C66W-10SI-2.7

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AT93C66W-10SI-2.7 is a static random access memory (SRAM) fabricated using very dense advancements in semiconductor technology. It provides non-volatile memory storage and is mainly designed for application requiring a small amount of memory. The memory array consists of non-volatile static random access memory organized as 256 words of 16 bits each. The AT93C66W-10SI-2.7 is a reliable and cost effective solution for various automotive and industrial applications due to its excellent reliability and small footprint.

The AT93C66W-10SI-2.7 provides benefits for automotive, industrial, and embedded designs, where power requirements are tight. This device is constructed using proven metal-oxides-semiconductor (MOS) technology while ensuring low power consumption, low power dissipation and low standby current. It is packaged in a 8 pin small outline integrated circuit (SOIC) package, making it suitable for many applications.

The AT93C66W-10SI-2.7 offers the user a choice of programs stored in either the EPROM memory or the static RAM memory. This allows the device to be used for various applications such as data transfers, ID authentication, calibration data, code storage, power-up/down sequencing and various logic applications. Depending on the user’s needs, this chip can be read and/or written at high transfer rates.

In order to program the AT93C66W-10SI-2.7 memory, the user can use a host processor, microcontroller or programmer. It can either be programmed in-circuit or in a special programmer. Once the user has chosen their preferred programming method, the chip can be programmed either serially or in parallel. The static RAM memory can either be programmed or deleted in-system without having to remove the chip.

The working principle of the AT93C66W-10SI-2.7 is based on the “static” nature of the memory cells. Unlike conventional dynamic RAM, an SRAM memory cell does not need to be periodically refreshed and therefore can retain its information indefinitely. It works on the basis of a pair of cross-coupled inverters, connected and fed back through a pair of access transistors for easy reading and writing of data in the cells.

As the input and output signals of the SRAM memory cell remain exactly the same for all temperatures, it provides reliable operation over a wide temperature range. It is also relatively immune to noise and is less susceptible to soft errors compared to conventional dynamic RAM memories. The AT93C66W-10SI-2.7 is also equipped with a write protect feature which allows the data in the memory to be protected from accidental overwriting.

Overall, the AT93C66W-10SI-2.7 is a reliable and cost effective solution for various automotive, industrial, and embedded applications. Its small footprint and low power consumption make it a suitable solution for applications that require a small amount of memory and reliable operation over a wide temperature range. Furthermore, its write protect feature allows users to prevent accidental overwriting of data which ensures the reliability of the memory.

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