ATF-33143-BLKG

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ATF-33143-BLKG is an integrated N–Channel RF Power MOSFET with drain-source breakdown voltage of 30 V, gate-source breakdown voltage of 10 V, and maximum drain current of 43 A at 25 °C. This device utilizes a revolutionary thermal design with superior RF performance and rugged construction ideal for amplifier applications. It is manufactured using advanced high power, low resistance Low Gate Charged DirectFET. This is a vertical double-diffused, MOSFET with N–Channel enhancement mode structure and is designed for RF power applications.

Application Field

The ATF-33143-BLKG is widely used in many applications such as power amplifiers, power supplies, radio transceivers and microwave amplifiers meeting high requirements on linearity and efficiency. Many features make the device suitable to choose in switch mode power supplies, portable radio devices, CATV amplifier design and power driving motors. Generally this device is used in consumer electronic devices such as cellular base stations, TV amplifiers, and various consumer electronic accessories.

Working Principle

The operation of ATF-33143-BLKG MOSFET begins with the voltage applied between the gate and source being greater than the breakdown voltage (Vgs). The voltage causes a current to flow through the channel of the MOSFET, which then creates an electric field between the drain and source. This electric field attracts mobile electrons and allows them to move through the device. As more current flows through the device, it generates a higher voltage across the drain and source terminals. This generates a greater electric field which creates more current. As a result, the device is never saturated, meaning it can carry a huge amount of current with little thermal resistance.

The output voltage is dependent on three parameters—the applied voltage Vgs, the current Id, and the gate-source capacitance Cgs. One of the main advantages of ATF-33143-BLKG is its ability to operate in low voltage and high frequency range. It can handle high levels of current and still maintain high power levels. It offers fast switching speeds and good immunity to planarity to minimize the flow of parasitic inductance current.

In conclusion, the ATF-33143-BLKG is an integrated N-Channel RF Power MOSFET with remarkable features and advanced thermal design suitable for many applications such as power amplifiers, power supplies, radio transceivers and microwave amplifiers. It offers superior RF performance, fast switching speeds and low thermal resistance, making it a perfect choice for consumer electronic devices and other high power, fast switching applications.

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