ATF-33143-TR2G Allicdata Electronics
Allicdata Part #:

ATF-33143-TR2G-ND

Manufacturer Part#:

ATF-33143-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: FET RF 5.5V 2GHZ SOT-343
More Detail: RF Mosfet pHEMT FET 4V 80mA 2GHz 15dB 22dBm SOT-34...
DataSheet: ATF-33143-TR2G datasheetATF-33143-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: pHEMT FET
Frequency: 2GHz
Gain: 15dB
Voltage - Test: 4V
Current Rating: 305mA
Noise Figure: 0.5dB
Current - Test: 80mA
Power - Output: 22dBm
Voltage - Rated: 5.5V
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Description

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The ATF-33143-TR2G is a sub-miniature N-channel MOSFET transistor for use in RF applications. It has been designed to provide improved sensitivity of the radio receiver and increased linearity when used for high power linear applications. The transistor features an extremely low on-resistance and low insertion loss.

This high power RF transistor has a 50 mA current rating when used in linear modes of operations. It can also offer a switching current of up to 2 Amps when used in RF applications. The transistor has a breakdown voltage rating of 20 volts and a drain-source voltage rating of up to 24.5 volts.

The ATF-33143-TR2G is part of a family of N-channel MOSFET transistors that are suitable for RF and linear applications. It is a low distortion, low noise device that is capable of providing high quality audio, video, and digital signals. The power output is rated at 39.5 dBm when operating with a drain-source voltage of 24.5 volts.

The ATF-33143-TR2G MOSFET transistor has a range of usages, one of the most common being in audio/video receivers or amplifiers for RF applications. It can be used for high-power amplified signals that tend to produce high linearity and excellent quality image or sound. The transistor is also suitable for use in high-power home entertainment systems, PAs, and even motors.

The working principle of the ATF-33143-TR2G consists of a two-terminal gate and a three-terminal source. When a voltage is applied between the gate and source terminals, the resistance between the source and drain terminals decreases, thus enabling current to pass to the load. The amount of current that flows between the source and drain terminals depends on the voltage applied between the gate and source terminals and can be controlled by varying the gate-source voltage.

The efficiency of the ATF-33143-TR2G is achieved by its low gate-source capacitance and low on-resistance value. The combination of these two factors ensure excellent linearity and the ability to reduce current consumption and improve operating temperature. This ensures that the ATF-33143-TR2G is an excellent choice for RF and linear applications.

The ATF-33143-TR2G is a highly reliable, high power, and low noise device that can be successfully used in a wide range of RF and linear applications. Its low gate-source capacitance and low on-resistance values make it an ideal choice for high power applications where high linearity and noise reduction are essential. The transistor’s excellent efficiency and power output also make it suitable for use in many high-power home entertainment systems and PAs.

The specific data is subject to PDF, and the above content is for reference

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