ATF-331M4-TR1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ATF-331M4-TR1 is a power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) used to amplify and switch electrical signals in wide range of applications including radio-frequency (RF) power amplifiers, switching motor controllers, audio amplifiers, and integrated circuits.

MOSFETs are electronically operated devices in which constant current can be maintained. An input current is converted into an output current which is proportional to the input current. MOSFETs are unipolar devices, which means they consist of an N-type and P-type semiconductor-based material, enabling a single-side power switch.

ATF-331M4-TR1 features a total gate charge of 4.7nC, a drain-source voltage rating of 30V and Tcase rating of 85C. It also possesses a typical drain-source saturation of 0.3V with a drain current rating of 25A. This MOSFET is constructed of a planar lateral Shield Gate process. Its structure contains ESD Protection Diode and has an avalanche energy rating of 80mJ.

The ATF-331M4-TR1 is commonly used in RF power applications, because of its excellent RF performance. It also offers high speed switching, low drain source saturation voltage, and low gate charge. Common RF applications are base station power amplifiers, power meters, and other RF power equipment.

This device uses the principle of field-effect transistor (FET) technology to achieve amplification and switching of signals. The principle of FET technology relies on the electric field effect, wherein a voltage is placed between the gate and drain electrodes. This voltage represents the input current, which is converted into an output current.

The ATF-331M4-TR1 works by a phenomenon known as the electrostatic-capacitance principle. In this principle, the drain-source voltage is placed over the gate by controlling the charge at the gate. The gate voltage affects the drain source voltage and the current. This gate voltage and drain-source voltage forms an electric field, which drives the current flow between the source and drain.

The ATF-331M4-TR1 also uses the principle of breakdown voltage when the drain voltage increases more than the breakdown voltage, causing the device to break down and cease to function properly. This energy is dissipated as static energy and is proportional to the amount of current that is flowing through the device.

The ATF-331M4-TR1 is an efficient and cost-effective solution for a variety of applications in which power amplification and switching are necessary. It can be used for audio amplifiers, motor control, RF power amplifiers, and integrated circuits. Its high-performance RF power characteristics make it ideal for RF applications, where excellent RF performance is desired.

The specific data is subject to PDF, and the above content is for reference