ATF-34143-TR2G

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The ATF-34143-TR2G is a N-Channel Field-Effect Transistor (FET) designed for radio frequency (RF) amplifying applications. The device has one source and one drain terminal, as well as a gate terminal connecting to an oxide layer used to control the charge between the source and the drain. This device is used to control the current through the channel using the gate terminal and works on the principle of transconductance.

The ATF-34143-TR2G is designed using MOSFET design principles and is particularly suitable for microwave and radio frequency amplifications. This device has a sufficiently low input capacitance and output resistance, making it suitable for multiple types of microwave applications operating at frequencies up to 24GHz. Its stand-off voltage, or drain-source voltage, is 28V and it has a drain current of 9A and a peak drain current of 24A. Its thermal resistance, junction-to-ambient, is approximately 150°C/W, making it ideal for applications that require higher dissipation and temperature stability.

This device is intended for operation in military and commercial aviation, communications and propulsion systems. Its high reliability node allows for long-term operation and can withstand extreme temperatures and conditions. Additionally, because of the MOSFET design, this transistor device has a small support circuitry requirement and consumes very low power. These benefits make it preferable over traditional bipolar transistors.

The ATF-34143-TR2G operates on the principle of transconductance, which is the relationship between voltage applied to the gate and the current between the source and the drain. The voltage applied to the gate can control the source-drain current depending on the thickness of the oxide layer and the intensity of the electric charge the transistor can withstand. If the gate voltage is high enough, it can create a high electric field capable of creating a current path between the source and the drain. This principle is relied upon for the device\'s ability to amplify and control signals.

The ATF-34143-TR2G transistor is a useful device for RF applications due to its low noise and high gain, as well as its small size and low power consumption. Its advanced MOSFET design helps to provide superior linearity and switching performance when compared with traditional bipolar transistors. These benefits make it suitable for multiple types of amplification, modulation and signal control applications, particularly in military or commercial aviation, communications and propulsion systems.

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