ATF-35143-TR1G Allicdata Electronics

ATF-35143-TR1G Discrete Semiconductor Products

Allicdata Part #:

516-1784-2-ND

Manufacturer Part#:

ATF-35143-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: FET RF 5.5V 2GHZ SOT-343
More Detail: RF Mosfet pHEMT FET 2V 15mA 2GHz 18dB 10dBm SOT-34...
DataSheet: ATF-35143-TR1G datasheetATF-35143-TR1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: pHEMT FET
Frequency: 2GHz
Gain: 18dB
Voltage - Test: 2V
Current Rating: 80mA
Noise Figure: 0.4dB
Current - Test: 15mA
Power - Output: 10dBm
Voltage - Rated: 5.5V
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Base Part Number: ATF-35143
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ATF-35143-TR1G is a field-effect transistor (FET) often used in the radio frequency (RF) applications. It is designed for high-power, high-voltage applications and utilizes a single drain-gate configuration. The device is manufactured by Advanced Micro Devices (AMD) and can operate in either the enhancement or depletion mode.

A FET is a type of transistor that contains at least three terminals. A FET is normally operated at low current to control a higher current drawn through it. This allows the FET to be used as a switch or amplifier, controlling a larger current than if it were a stand-alone component. The ATF-35143-TR1G takes this concept one step further, allowing for high-voltage, high-power uses.

The ATF-35143-TR1G consists of three gates (Source, Gate, and Drain) connected to a substrate (the material upon which the transistor is made). The source gate is connected to a power supply, the drain gate is connected to the load that is driven by the transistor, and the gate is connected to the control voltage, which is controlled by the device\'s user. When the power supply is applied to the transistor, an electric field is created which controls the current flowing between the drain and source. This field depends on the voltage applied to the gate, allowing it to be used as a variable resistor.

The ATF-35153-TR1G can operate in either the enhancement or depletion mode depending on the polarity of the gate voltage relative to the substrate. In the enhancement mode, when the gate voltage is lower than the substrate voltage, the transistor is in an "on" state, allowing current from the source to flow through to the drain. In the depletion mode, when the gate voltage is higher than the substrate voltage, the transistor is in an "off" state, preventing current from flowing from the source to the drain.

The transistor is also designed for high-power applications, meaning it can pass large amounts of current through it. Due to its high-power capabilities, it is often used in high-voltage switching applications, such as power amplifiers and modulators, as well as in low-noise radio-frequency switching applications, such as those found in satellite communications and radio receivers.

The ATF-35153-TR1G can also be used in other RF applications. It can be used as a variable gain amplifier, allowing the user to adjust the gain of the amplified signal. It can also be used as an oscillator, providing a stable source of output frequency, or as a mixers, providing a way to convert two different frequencies into a third, more useable one. Finally, it can be used as an antenna switch, providing a way to control the power output to an antenna in a transmitter or receiver.

The ATF-35143-TR1G is a versatile device, and can be used in a wide range of RF applications. It is well-suited for high-power, high-voltage applications, and can be used in either the enhancement or depletion mode, making it a very useful component for both transmitter and receiver systems.

The specific data is subject to PDF, and the above content is for reference

Latest Products
MRF6S21050LR3

FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...

MRF6S21050LR3 Allicdata Electronics
MRF6S18060NR1

FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...

MRF6S18060NR1 Allicdata Electronics
MRF1550NT1

FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...

MRF1550NT1 Allicdata Electronics
MRF8S21100HSR3

FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...

MRF8S21100HSR3 Allicdata Electronics
LET16060C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16060C Allicdata Electronics
LET16045C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16045C Allicdata Electronics