Allicdata Part #: | 516-1865-ND |
Manufacturer Part#: |
ATF-36077-STR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | FET RF 3V 12GHZ 77-SMD |
More Detail: | RF Mosfet pHEMT FET 1.5V 10mA 12GHz 12dB 5dBm 77 |
DataSheet: | ATF-36077-STR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | pHEMT FET |
Frequency: | 12GHz |
Gain: | 12dB |
Voltage - Test: | 1.5V |
Current Rating: | 45mA |
Noise Figure: | 0.5dB |
Current - Test: | 10mA |
Power - Output: | 5dBm |
Voltage - Rated: | 3V |
Package / Case: | 4-SMD (77 Pack) |
Supplier Device Package: | 77 |
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ATF-36077-STR application field and working principle
The ATF-36077-STR is a N-Channel Enhancement Mode Field Effect Transistor (RF FET) commonly used in the radio frequency range. It has a power dissipation of up to 12.5 watts and is intended for use in high frequency switching, linear amplification, and small signal applications. It is packaged in a 6-pin (TO-263AA) surface mount package.
Working Principle of ATF-36077-STR
The ATF-36077-STR is an N-Channel Enhancement Mode Field Effect Transistor (RF FET). It consists of two N-Channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in parallel configuration and is therefore referred to as an N-Channel Enhancement Mode Field Effect Transistor. Its working principle is similar to that of a general purpose MOSFET.
The peculiarity of the ATF-36077-STR lies in its high current gain and high frequency operation up to 8GHz. This is due to its low Gate-to-Source voltage (VGS) and low on-resistance (RDS (on)).
The Gate of the ATF-36077-STR is connected to the source and when a positive voltage is applied to it, a depletion region is created. This depletion region increases with increasing voltage thus reducing the current flow between the source and the drain.
The ATF-36077-STR also has a reverse conduction diode across its drain and source terminals. This diode helps to reduce the reverse current flow between the source and the drain.
Applications of ATF-36077-STR
The ATF-36077-STR is suitable for use in high frequency switching, linear amplification and small signal applications. Examples include radio frequency (RF) power amplifiers, RF power switching circuits, RF signal modulators, large current switching circuits, high speed switching circuits and audio amplifiers.
The ATF-36077-STR is particularly useful in applications where low Gate-to-Source voltage, high current gain and high frequency operation is required. It can also be used in RF power amplification systems, radio transmitters, radio receivers, and amplifier stages for communication systems.
The ATF-36077-STR is a reliable and high performance device which offers low distortion, high efficiency and low noise. It is suitable for use in a wide range of applications where robust performance and reliability are key requirements.
Conclusion
The ATF-36077-STR is an N-Channel Enhancement Mode Field Effect Transistor (RF FET) which is suitable for use in high frequency switching, linear amplification and small signal applications. It is characterized by its low Gate-to-Source voltage, high current gain and high frequency operation up to 8GHz. This makes it suitable for use in radio frequency (RF) power amplifiers, RF power switching circuits, RF signal modulators, high speed switching circuits and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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