ATF-36163-TR2G Allicdata Electronics
Allicdata Part #:

ATF-36163-TR2G-ND

Manufacturer Part#:

ATF-36163-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: FET RF 3V 4GHZ SOT-363
More Detail: RF Mosfet pHEMT FET 2V 15mA 4GHz 15.8dB 5dBm SOT-3...
DataSheet: ATF-36163-TR2G datasheetATF-36163-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: pHEMT FET
Frequency: 4GHz
Gain: 15.8dB
Voltage - Test: 2V
Current Rating: 40mA
Noise Figure: 0.6dB
Current - Test: 15mA
Power - Output: 5dBm
Voltage - Rated: 3V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The ATF-36163-TR2G is an N-channel, Depletion-Mode, Slope-Lateral, Silicon Junction, Field Effect Transistor (JFET) designed to operate up to 500 MHz in the RF spectrum. With this JFET, many RF amplifiers, pre-amps, and receivers can be designed.

Features

The ATF-36163-TR2G has several features that make it ideal for RF applications. One of the main features is its low noise performance of only 1.5db typical at 500 MHz. This, paired with its low amplifier noise figure, makes it a great choice for RF applications, such as pre-amplifiers, receivers, and other low noise applications. The ATF-36163-TR2G also has a wide dynamic range of more than 11o dB and a good gain flatness yield, especially when compared to other JFETs.

Working Principle/Design

The ATF-36163-TR2G is a depletion mode, vertical P channel JFET, meaning it does not require a bias voltage to operate. The operation relies on the principles of the electric field between the gate and the source terminals. By applying a negative gate voltage, the gate-to-source voltage establishes a potential barrier between the drain and the source, which results in an increase in resistance and reduction in current between the two, allowing the ATF-36163-TR2G to be used as an RF amplifier, preamplifier, or receiver.

The ATF-36163-TR2G is also designed with a low on-resistance, which allows for higher gain and power handling capabilities. This feature also results in lower distortion levels and a higher signal-to-noise ratio, making it a great choice for RF applications where low distortion and low noise are of utmost importance.

Applications

The ATF-36163-TR2G can be used in a variety of RF applications. It is especially well suited for low noise pre-amplification and wireless receiver applications. It can also be used as a voltage-variable resistor, as a way to vary resistance in accordance with a control voltage, making it great for noise reduction circuitry. Additionally, it can be used to amplify signals in any number of applications, such as audio amplifiers, radio transmitters and receivers, and mobile communications devices.

Overall, the ATF-36163-TR2G is a great choice for any RF application, due to its low noise performance, wide dynamic range, and excellent gain flatness. With its low on-resistance, it is also excellent for high gain, low power applications. In addition, its vertical P channel design allows it to be used as a variable resistance without the need for a bias voltage, making it perfect for both RF applications as well as noise reduction circuitry.

The specific data is subject to PDF, and the above content is for reference

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