ATF-38143-TR2G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	pHEMT FET
Frequency:	2GHz
Gain:	16dB
Voltage - Test:	2V
Current Rating:	145mA
Noise Figure:	0.4dB
Current - Test:	10mA
Power - Output:	12dBm
Voltage - Rated:	4.5V
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	SOT-343

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Introduction

ATF-38143-TR2G is a source-gate GaN field effect power transistor developed by Freescale Semiconductor. It is a high-speed FET for high-power and high-efficiency wireless LAN power amplifiers and power supplies. This paper introduces the application field and working principle of the ATF-38143-TR2G.

Application Field

ATF-38143-TR2G is suitable for use in IEEE 802.11g/n high-efficiency devices. Its main application fields include 802.11g/n Wi-Fi power amplifiers, high-efficiency power supplies, switched mode power supplies (SMPS), high-efficiency DC/DC converters. This device has a low on-resistance of 5.2Ω and a maximum current capability of 66A, which gives it a maximum power capacity of 210W. The bandwidth of the device is 50 MHz, which makes it suitable for high-speed applications. The breakdown voltage is 65V, giving it excellent voltage regulation capabilities.

Working Principle

ATF-38143-TR2G is a GaN FET based on Freescale Semiconductor\'s advanced power single heterostructure (PSH) process technology. This technology enables the device to switch frequencies up to 1GHz while maintaining excellent power handling and thermal performance. The device has a built-in dual enhancement-mode structure. The gate control system is composed of two PMOS transistors connected in parallel, each with a certain control voltage. The transistor controls the current ability of the source, gate, and drain through the source gate voltage. The source-gate voltage difference creates a space-charge electric field between the gate and the source, making it possible for electrons to pass from the source to the drain. This forms a conduction channel between the source and the drain, allowing current to flow. The device also has a Reverse-bias-safe operation, which prevents the device from being damaged in reverse bias conditions. This device is capable of operating at a temperature range of -40°C to 125°C, making it suitable for a wide range of industrial applications.

Conclusion

ATF-38143-TR2G is a GaN FET developed by Freescale Semiconductor with a variety of advantages such as fast switching, low on-resistance, high power capacitance, and reverse bias safe operation. It is suitable for use in high-efficiency power amplifiers, power supplies, SMPS and DC/DC converters. The working principle of the device is based on the dual enhancement-mode structure and space-charge electric field.

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