ATF-52189-BLK

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The ATF-52189-BLK is a Gallium Arsenide field-effect transistor (GaAs FET) developed by Anadigics Corporation, released in late 2018. This GaAs FET is used as a part of RF circuitry in a variety of applications, including, among others: broadband amplifiers, low-noise amplifiers, and switching circuits. The ATF-52189-BLK is designed for specific use in cell phone, communication, and defense industry electronics where operation in high power, wideband frequencies is needed.

The ATF-52189-BLK is a GaAs FET with BZVS071025AJ14 RF output power rating of 25W. It has a threshold voltage of -1.1V and a drain current of 108mA @ 12V. It has a frequency range of 0.5-2.5GHz. It has a gain range of 7-12dB depending on operating temperature and power supply. Other features of this device include an air-core inductor, a balun, and an on-chip power detector.

The general working principle of an FET is based on the fact that a voltage applied to the gate of the device modulates the conduction underneath. Specifically, the ATF-52189-BLK works by using an electric field to alter the behavior of the voltage-dependent source and drain electrodes. This change in behavior is proportional to the voltage applied to the gate of the FET. The variation in the electrical characteristics of the FET causes power consumption to vary as well.

Because of its wide frequency range, high output power rating, and low noise output, the ATF-52189-BLK is ideal for use in a variety of military and communications applications. In the military, the device can be used for power amplification, radio transmission, and mobile communications. In the communications industry, the device can be used in broadband amplifiers, low-noise amplifiers, and switching circuits. Additionally, it can be used in cell phones, radar systems, and the Internet of Things. Its efficiency and small size make it well suited for use in energy management and power-update technology.

The ATF-52189-BLK is a cost-effective solution for applications that require high-power and wide frequency range operation. It has a high performance potential and excellent temperature characteristics. The device has a low-noise architecture for RF applications, high power output, and wide frequency range. With its large dynamic range and high linearity, the device can provide excellent performance for a variety of applications.

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