ATF-521P8-TR2 Allicdata Electronics
Allicdata Part #:

ATF-521P8-TR2-ND

Manufacturer Part#:

ATF-521P8-TR2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: FET RF 7V 2GHZ 8-LPCC
More Detail: RF Mosfet pHEMT FET 4.5V 200mA 2GHz 17dB 26.5dBm 8...
DataSheet: ATF-521P8-TR2 datasheetATF-521P8-TR2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: pHEMT FET
Frequency: 2GHz
Gain: 17dB
Voltage - Test: 4.5V
Current Rating: 500mA
Noise Figure: 1.5dB
Current - Test: 200mA
Power - Output: 26.5dBm
Voltage - Rated: 7V
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-LPCC (2x2)
Description

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Introduction to ATF-521P8-TR2

The ATF-521P8-TR2 is a Silizium-Germanium (SiGe) F y o s - f e t transistor device manufactured by Skyworks Solutions. This transistor device is an advanced, highly reliable and easy-to-use solution for RF applications. The ATF-521P8-TR2 can be used to amplify or oscillate radio or broadcast signals and is suitable for a wide range of applications.

Applications of ATF-521P8-TR2

The ATF-521P8-TR2 is mainly used for RF applications such as for amplification, oscillation and modulation of radio, broadcast and cellular signals. Examples include cellular base stations, microwave communication, radar and satellite communication and other high-frequency applications. This device is also beneficial for the generation of wideband signals, modulation and demodulation, mixing and frequency conversion.

Working Principle of ATF-521P8-TR2

The ATF-521P8-TR2 is a field effect transistor (FET). FET transistors are transistors that use a voltage applied to a ‘gate’ to control a current flowing between two other terminals (known as the source and drain). In the case of the ATF-521P8-TR2, this voltage is used to control the frequency of radio and cellular signals.

The ATF-521P8-TR2 is a depletion mode FET device, which means the device is ‘on’ when the voltage at the gate is zero and the flow of current is enabled. When an external voltage is applied to the gate, the FET transistor turns ‘off’ as the current flow is stopped. This change in voltage also changes the oscillation frequency of the RF signal that is being amplified.

The ATF-521P8-TR2 also features an LDD (Leadless Device Design) package, which allows the device to be placed on the circuit board with minimal wiring. This helps to reduce space and power consumption and offers superior thermal management and enhanced reliability.

Conclusion

The ATF-521P8-TR2 is a reliable and easy-to-use SiGe F y o s - f e t transistor device manufactured by Skyworks Solutions. The ATF-521P8-TR2 can be used to amplify, oscillate and modulate radio, broadcast and cellular signals, making it suitable for a variety of applications. This device works on the principle of a FET (Field Effect Transistor). The LDD package helps to reduce space and power consumption while enhancing the device\'s reliability.

The specific data is subject to PDF, and the above content is for reference

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