Allicdata Part #: | ATF-521P8-TR2-ND |
Manufacturer Part#: |
ATF-521P8-TR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | FET RF 7V 2GHZ 8-LPCC |
More Detail: | RF Mosfet pHEMT FET 4.5V 200mA 2GHz 17dB 26.5dBm 8... |
DataSheet: | ATF-521P8-TR2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | pHEMT FET |
Frequency: | 2GHz |
Gain: | 17dB |
Voltage - Test: | 4.5V |
Current Rating: | 500mA |
Noise Figure: | 1.5dB |
Current - Test: | 200mA |
Power - Output: | 26.5dBm |
Voltage - Rated: | 7V |
Package / Case: | 8-WFDFN Exposed Pad |
Supplier Device Package: | 8-LPCC (2x2) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction to ATF-521P8-TR2
The ATF-521P8-TR2 is a Silizium-Germanium (SiGe) F y o s - f e t transistor device manufactured by Skyworks Solutions. This transistor device is an advanced, highly reliable and easy-to-use solution for RF applications. The ATF-521P8-TR2 can be used to amplify or oscillate radio or broadcast signals and is suitable for a wide range of applications.
Applications of ATF-521P8-TR2
The ATF-521P8-TR2 is mainly used for RF applications such as for amplification, oscillation and modulation of radio, broadcast and cellular signals. Examples include cellular base stations, microwave communication, radar and satellite communication and other high-frequency applications. This device is also beneficial for the generation of wideband signals, modulation and demodulation, mixing and frequency conversion.
Working Principle of ATF-521P8-TR2
The ATF-521P8-TR2 is a field effect transistor (FET). FET transistors are transistors that use a voltage applied to a ‘gate’ to control a current flowing between two other terminals (known as the source and drain). In the case of the ATF-521P8-TR2, this voltage is used to control the frequency of radio and cellular signals.
The ATF-521P8-TR2 is a depletion mode FET device, which means the device is ‘on’ when the voltage at the gate is zero and the flow of current is enabled. When an external voltage is applied to the gate, the FET transistor turns ‘off’ as the current flow is stopped. This change in voltage also changes the oscillation frequency of the RF signal that is being amplified.
The ATF-521P8-TR2 also features an LDD (Leadless Device Design) package, which allows the device to be placed on the circuit board with minimal wiring. This helps to reduce space and power consumption and offers superior thermal management and enhanced reliability.
Conclusion
The ATF-521P8-TR2 is a reliable and easy-to-use SiGe F y o s - f e t transistor device manufactured by Skyworks Solutions. The ATF-521P8-TR2 can be used to amplify, oscillate and modulate radio, broadcast and cellular signals, making it suitable for a variety of applications. This device works on the principle of a FET (Field Effect Transistor). The LDD package helps to reduce space and power consumption while enhancing the device\'s reliability.
The specific data is subject to PDF, and the above content is for reference
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...