ATF-531P8-TR1 Discrete Semiconductor Products |
|
Allicdata Part #: | 516-2239-2-ND |
Manufacturer Part#: |
ATF-531P8-TR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | FET RF 7V 2GHZ 8-LPCC |
More Detail: | RF Mosfet E-pHEMT 4V 135mA 2GHz 20dB 24.5dBm 8-LPC... |
DataSheet: | ATF-531P8-TR1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | E-pHEMT |
Frequency: | 2GHz |
Gain: | 20dB |
Voltage - Test: | 4V |
Current Rating: | 300mA |
Noise Figure: | 0.6dB |
Current - Test: | 135mA |
Power - Output: | 24.5dBm |
Voltage - Rated: | 7V |
Package / Case: | 8-WFDFN Exposed Pad |
Supplier Device Package: | 8-LPCC (2x2) |
Base Part Number: | ATF-531P8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FETs (Field Effect Transistors) are semiconductor devices that use the flow of electric current to control the movement of electrons in a channel between two terminals, called the source and the drain. MXP8-TR1 is a type of FET, known as a Metal Oxide Semiconductor Field Effect Transistor or MOSFET. MXP8-TR1 is commonly used in Radio Frequency (RF) applications.
MXP8-TR1 is a voltage-controlled FET, which means it works on the principle of capacitive coupling. Its gate, the control terminal, is designed to box a small amount of charge when a voltage is applied. This charge, in turn, accumulates on the drain and controls the current flow from source to drain, the output voltage.
MXP8-TR1’s capacitive charge increases with increasing Voltage, and its current capability increases with decreasing Voltage. Therefore, this kind of FET can be used in both higher voltage and lower voltage applications. Because of its excellent electrical characteristics, MXP8-TR1 is particularly suitable for use in high power switching applications such as automotive, industrial, medical, and communications systems.
Due to the high frequency of RF applications, a combination of Gate Turn-On (GTO) and insulated-gate bipolar transistor (IGBT) technologies has been developed to ensure stability and higher efficiency. MXP8-TR1 is a GTO-IGBT combination, combining the narrow conduction losses of IGBTs and the low gate driving power of GTOs. This combination offers improved performance over other available components, allowing for higher levels of performance with lower power losses.
MXP8-TR1 is used in a variety of RF applications, such as power amplifiers, voltage-controlled oscillators (VCOs), RF signal converters, and RF mixing functions. It is also used in high frequency communication systems for data transmission and storage. In some applications it provides switching between two power supplies and in others it can be used as an analog multiplexer to select a signal from among several input signals with the help of a control signal.
Overall, MXP8-TR1 is an excellent FET choice for RF applications, due to its combination of low losses and excellent speed characteristics. It is an efficient device, providing an easy-to-use solution for customers that require high-performance devices in their systems. Thanks to its versatile design, MXP8-TR1 can be used for a wide range of applications and is sure to continue to be a popular choice for RF related applications in the future.
The specific data is subject to PDF, and the above content is for reference
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...