
Allicdata Part #: | ATF-541M4-TR2-ND |
Manufacturer Part#: |
ATF-541M4-TR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | IC PHEMT 2GHZ 3V 60MA MINIPAK |
More Detail: | RF Mosfet pHEMT FET 3V 60mA 2GHz 17.5dB 21.4dBm Mi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | pHEMT FET |
Frequency: | 2GHz |
Gain: | 17.5dB |
Voltage - Test: | 3V |
Current Rating: | 120mA |
Noise Figure: | 0.5dB |
Current - Test: | 60mA |
Power - Output: | 21.4dBm |
Voltage - Rated: | 5V |
Package / Case: | 0505 (1412 Metric) |
Supplier Device Package: | MiniPak 1412 |
Base Part Number: | ATF-541M4 |
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The ATF-541M4-TR2 device is a four-terminal, N-channel, enhancement-mode, RF field-effect transistor (FET) manufactured by Atmel Corporation. It is an important component for radio frequency (RF) applications, such as amplifiers, RF oscillators, modulators, etc. This device is designed to operate up to 4GHz with high gain and an internal active bias generator.
ATF-541M4-TR2 Application Field
The ATF-541M4-TR2 is particularly suitable for small signal applications, such as front-end amplifiers, and up-converters. It can also be used in other applications, such as high efficiency power amplifiers, low interception, inverters, and low noise amplifiers for microwave applications. Due to its high input impedance, this device is also suitable for use in high efficiency active load modulators.
ATF-541M4-TR2 Working Principle
The ATF-541M4-TR2 operates in the enhancement mode, thus it requires a gate bias voltage to turn the device on. The bias voltage is typically generated by an internal active bias generator and is fed to the gate. The bias voltage increases with drain current, which is used to eliminate the bias voltage drift caused by process and temperature changes, thus providing a more stable operation.
The device exhibits high linearity over a wide range of signal power levels and is highly immune to the effects of intermodulation distortion and signal drift caused by environmental changes. The performance of the ATF-541M4-TR2 is enhanced by its low source-drain capacitance. This enables the device to be used in applications with high frequency components, such as microwave transceivers.
The ATF-541M4-TR2 device is manufactured using an advanced process technology that guarantees superior performance and superior reliability. The device is packaged in a lead-free, mold compound package, which guarantees protection from moisture and other environmental contaminants. The package is RoHS compliant.
In summary, the ATF-541M4-TR2 is a four-terminal, N-channel, enhancement-mode, RF field-effect transistor (FET) manufactured by Atmel Corporation that is specifically designed for RF applications. It provides high gain and stability, and is suitable for use in small signal applications such as front-end amplifiers, and up-converters. The device is well protected from the environment due to its lead-free, mold compound package, and is RoHS compliant.
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