ATF-541M4-TR2 Allicdata Electronics
Allicdata Part #:

ATF-541M4-TR2-ND

Manufacturer Part#:

ATF-541M4-TR2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: IC PHEMT 2GHZ 3V 60MA MINIPAK
More Detail: RF Mosfet pHEMT FET 3V 60mA 2GHz 17.5dB 21.4dBm Mi...
DataSheet: ATF-541M4-TR2 datasheetATF-541M4-TR2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: pHEMT FET
Frequency: 2GHz
Gain: 17.5dB
Voltage - Test: 3V
Current Rating: 120mA
Noise Figure: 0.5dB
Current - Test: 60mA
Power - Output: 21.4dBm
Voltage - Rated: 5V
Package / Case: 0505 (1412 Metric)
Supplier Device Package: MiniPak 1412
Base Part Number: ATF-541M4
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ATF-541M4-TR2 device is a four-terminal, N-channel, enhancement-mode, RF field-effect transistor (FET) manufactured by Atmel Corporation. It is an important component for radio frequency (RF) applications, such as amplifiers, RF oscillators, modulators, etc. This device is designed to operate up to 4GHz with high gain and an internal active bias generator.

ATF-541M4-TR2 Application Field

The ATF-541M4-TR2 is particularly suitable for small signal applications, such as front-end amplifiers, and up-converters. It can also be used in other applications, such as high efficiency power amplifiers, low interception, inverters, and low noise amplifiers for microwave applications. Due to its high input impedance, this device is also suitable for use in high efficiency active load modulators.

ATF-541M4-TR2 Working Principle

The ATF-541M4-TR2 operates in the enhancement mode, thus it requires a gate bias voltage to turn the device on. The bias voltage is typically generated by an internal active bias generator and is fed to the gate. The bias voltage increases with drain current, which is used to eliminate the bias voltage drift caused by process and temperature changes, thus providing a more stable operation.

The device exhibits high linearity over a wide range of signal power levels and is highly immune to the effects of intermodulation distortion and signal drift caused by environmental changes. The performance of the ATF-541M4-TR2 is enhanced by its low source-drain capacitance. This enables the device to be used in applications with high frequency components, such as microwave transceivers.

The ATF-541M4-TR2 device is manufactured using an advanced process technology that guarantees superior performance and superior reliability. The device is packaged in a lead-free, mold compound package, which guarantees protection from moisture and other environmental contaminants. The package is RoHS compliant.

In summary, the ATF-541M4-TR2 is a four-terminal, N-channel, enhancement-mode, RF field-effect transistor (FET) manufactured by Atmel Corporation that is specifically designed for RF applications. It provides high gain and stability, and is suitable for use in small signal applications such as front-end amplifiers, and up-converters. The device is well protected from the environment due to its lead-free, mold compound package, and is RoHS compliant.

The specific data is subject to PDF, and the above content is for reference

Latest Products
MRF6S21050LR3

FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...

MRF6S21050LR3 Allicdata Electronics
MRF6S18060NR1

FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...

MRF6S18060NR1 Allicdata Electronics
MRF1550NT1

FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...

MRF1550NT1 Allicdata Electronics
MRF8S21100HSR3

FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...

MRF8S21100HSR3 Allicdata Electronics
LET16060C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16060C Allicdata Electronics
LET16045C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16045C Allicdata Electronics