ATF-55143-TR1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ATF-55143-TR1G is a high-performance Field-Effect Transistor (FET), which provides consumers with a powerful and reliable solution for their radio frequency (RF) needs. This unique device is a N-Channel Enhancement-mode FET, which is typically in center frequency applications up to 4 GHz.

At the heart of the ATF-55143-TR1G is the unique FET material, which is a GaAs (Gallium Arsenide) material featuring a single high-K (permittivity) dielectric layer. GaAs FETs are an ideal choice for high-frequency applications due to their high performance, low noise characteristics, and long-term reliability.

The ATF-55143-TR1G features an advanced gate architecture designed to minimize the ion mobility and source-drain leakage current. This advanced architecture provides the user with an improved device with an extended low-noise gain and high consistency in device parameters. This is especially useful when working in higher-frequency applications, where noise and stability are key performance parameters.

The FET’s unique design also provides consumers with a low-distortion drive capability, making it ideal for use in high-power applications. The device is capable of driving more power than many competing FET designs, making it an excellent choice for a wide range of applications. Additionally, the device is designed to be highly efficient, with low power dissipation and low gate capacitance.

The ATF-55143-TR1G is designed to have an exceptionally low gate capacitance, and to provide users with an exceptionally high performance. This FET also offers excellent current and voltage gain characteristics, allowing the device to deliver more power than other competing devices.

The ATF-55143-TR1G is also designed to provide consumers with an improved RF linearity in comparison to other FET designs. This improved linearity allows the device to be used for more power-sensitive applications, and to provide improved signal-to-noise ratios over a wide range of frequencies.

In addition to its excellent performance, the ATF-55143-TR1G is designed to have a higher operating temperature than many other FET designs. This increased temperature range helps ensure that the device will function reliably in harsher environmental conditions. The FET is designed to be able to withstand temperatures up to 175°C without degrading its performance.

The ATF-55143-TR1G is designed to provide consumers with an efficient and reliable solution for their radio-frequency needs. The device is designed to offer excellent performance and improved linearity, and is suitable for use in a wide range of applications. Its advanced gate architecture and low-distortion drive capability make it an ideal choice for high-power applications, where noise and stability are key criteria.

The specific data is subject to PDF, and the above content is for reference