Allicdata Part #: | ATF-55143-TR2G-ND |
Manufacturer Part#: |
ATF-55143-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | FET RF 5V 2GHZ SOT-343 |
More Detail: | RF Mosfet E-pHEMT 2.7V 10mA 2GHz 17.7dB 14.4dBm SO... |
DataSheet: | ATF-55143-TR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | E-pHEMT |
Frequency: | 2GHz |
Gain: | 17.7dB |
Voltage - Test: | 2.7V |
Current Rating: | 100mA |
Noise Figure: | 0.6dB |
Current - Test: | 10mA |
Power - Output: | 14.4dBm |
Voltage - Rated: | 5V |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | SOT-343 |
Base Part Number: | ATF-55143 |
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ATF-55143-TR2G is a high linearity, high-power FET device. It is a sophisticated and highly advanced Technology Field Effect Transistor that is widely used in high frequency, high power applications such as military, space, and commercial communication systems. The device is well suited for use in ultra-high frequency amplifiers, receivers, and oscillators, as well as in a wide variety of other demanding communications systems. As a well-proven device, the RF performance is backed by years of successful operation in many demanding environments.
The ATF-55143-TR2G uses a well-designed, fully integrated field-effect transistor (FET) structure that is well suited for many high-frequency applications. The amplifier architecture of the device enables it to deliver exceptionally low intermodulation distortion and high linearity, on top of its excellent gain, dynamics, and stability characteristics. The ATF-55143-TR2G is a versatile, high performance FET device that is capable of delivering a wide variety of functions in modern, high-complexity electronic systems.
The working principle of ATF-55143-TR2G is built upon a well-designed and advanced MOSFET technology. It is an enhancement-mode device that has two primary terminals. One of these is the gate, which is the control terminal, while the other is the source terminal, which is the input. The device utilizes a unique voltage-sensitive modulation of the gate to control its output. When voltage is applied to the gate, the channel conductivity of the FET will increase, which in turn will cause the FET to run either in its saturated or active regions. In the active region, the device will act as an amplifier, while in the saturated region, the device will act as a switch.
The ATF-55143-TR2G is capable of operating over a wide frequency range, up to 10GHz, making it suitable for a large number of high-frequency applications. Its low insertion loss and high available power makes it an excellent choice for various RF amplifier designs. Its small form factor also makes it compatible with most modern circuitry while at the same time delivering outstanding performance. The device offers exceptional isolation, power handling capability, high frequency operation, and excellent linearity, making it one of the most reliable and robust FET devices available.
In summary, the ATF-55143-TR2G is a highly advanced and extremely capable FET device. It offers support for a wide range of RF applications and has been proven to deliver excellent performance in a wide variety of demanding environments. The device utilizes a sophisticated MOSFET technology that allows for superior control and modulation, as well as low intermodulation distortion and high linearity. Highly advanced and versatile, the ATF-55143-TR2G is the ideal choice for high-performance and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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