ATF-58143-BLKG

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The ATF-58143-BLKG is an advanced RF MOSFET transistor integrated circuit (IC), featuring excellent high-frequency performance due to its high transconductance and low input capacitance with low gate threshold voltage. The device also possesses significant device size and power consumption reductions due to its center-gate and ultra-shallow junction (USJ) technology.

The ATF-58143-BLKG utilizes MOSFET technology in radio-frequency applications and is suitable for broadband transmission and receive applications in the 0.02 – 100GHz frequency range. The large transconductance and low input capacitance enable the device to handle large signals with high levels of accuracy. The low gate threshold voltage, due to its USJ technology, allows the device to respond quickly to various RF signa inputs, while still exceeding industry standards in terms of power consumption.

The ATF-58143-BLKG is capable of operating over a wide range of power levels, from low power and low frequency signals to high power and fast-switching radio-frequency signals. Its wide-range of operating voltages allows for field-variability capabilities, and its low gate-bias requirements enable the support of multiple RF protocol stacks. The device’s high transconductance also enables it to handle high frequency signals and high power levels. Additionally, the device’s center-gate technique prevents input/output capacitance interaction, allowing for maximum flexibility in applications with variable power levels.

In applications requiring radiation resistance, the ATF-58143-BLKG is designed to be robust against the effects of radiation, and its built-in radiation shielding makes it suitable for any environment that may be exposed to high levels of radiation. Additionally, the device also exhibits inherent shielding as a result of its center-gate technology, allowing it to easily withstand the effects of electrostatic discharge (ESD) and other electromagnetic interference (EMI). Overall, the ATF-58143-BLKG is a high-performance, ultra-shallow junction RF MOSFET featuring excellent high-frequency performance, low power consumption and high device reliability. Its low gate threshold voltage, wide range of operating voltage, and high transconductance make it ideal for a variety of radio-frequency applications. Its small size, low capacitance, and radiation hardness also make it suitable for many applications requiring resistance to radiation.

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