Allicdata Part #: | 620-1161-2-ND |
Manufacturer Part#: |
ATS665LSGTN-T |
Price: | $ 0.00 |
Product Category: | Sensors, Transducers |
Manufacturer: | Allegro MicroSystems, LLC |
Short Description: | MAGNETIC SWITCH SPEC PURP 4SIP |
More Detail: | Digital Switch Special Purpose Open Drain Hall Eff... |
DataSheet: | ATS665LSGTN-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Function: | Special Purpose |
Technology: | Hall Effect |
Polarization: | South Pole |
Sensing Range: | 70% Trip, 30% Release |
Test Condition: | 25°C |
Voltage - Supply: | 3.3 V ~ 24 V |
Current - Supply (Max): | 14mA |
Current - Output (Max): | 20mA |
Output Type: | Open Drain |
Features: | -- |
Operating Temperature: | -40°C ~ 150°C (TA) |
Package / Case: | 4-SSIP |
Supplier Device Package: | 4-SIP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Magnetic sensors and switches are an important type of automated equipment used in many applications, including automation, robotics and medical systems. The ATS665LSGTN-T is a solid state magnetic sensor switch consisting of an integrated circuit, a switching circuit, and an active magnet. This device uses a Hall Effect device to detect presence of a magnetic field.
Application field
The ATS665LSGTN-T is commonly used in applications that require detection of metal objects or other magnetically-regulated materials. It is a reliable and cost-effective solution for identifying metallic objects or other materials that have been magnetized. Common applications include material handling, metal detection, robotics, and medical systems.
Working principle
The ATS665LSGTN-T switch utilizes an integrated Hall effect device to detect the presence of a magnetic field. The Hall effect device senses changes in the magnetic field by producing a voltage which is proportional to the strength of the magnetic flux density. When the magnetic field becomes strong enough to exceed the threshold voltage level of the Hall-effect transistor, a logic-level signal is generated, indicating the presence of a magnetic field.
The device separates an input of 5-24VDC into two different outputs which are used to control the switch. The first output is used to turn on the switching circuit to activate the switch, while the second output controls the on/off state of the active magnet. In order to turn off the switch, an external magnet is brought into close proximity to the magnet in the device.
The ATS665LSGTN-T switch is relatively easy to implement, as its three main components (integrated circuit, switching circuit, and magnet) are all pre-assembled into a single package. Its small size also allows for easy installation in many applications, and it is capable of operating in temperatures ranging from -40°C to 125°C.
Conclusion
The ATS665LSGTN-T is a solid state magnetic sensor switch that is ideal for applications that require detection of metallic objects or other materials that have been magnetized. Its integrated Hall effect device makes it a cost-effective, reliable solution for such needs. Its small size and accompanying components are also useful in allowing for easy installation and operation in many applications.
The specific data is subject to PDF, and the above content is for reference
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