ATV02W170-HF Circuit Protection

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TVS - Diodes are a type of protection components used in a wide variety of electronic applications. The ATV02W170-HF is a diode of this type that is designed for ultra-high speed protection against electrostatic discharge (ESD) events. In this article, we will discuss the application field and working principle of this diode.

The device is designed for signal and bus line protection especially in mobile phones, PDAs, information appliances, computers, peripheral devices, and embedded systems that are susceptible to ESD events. It is particularly suitable for applications with data rates up to 25 Gbps and offers an adjacent port isolation of up to 30 dB up to 10 GHz. With a low capacitance of only 0.45 pF, it is able to meet the requirements of protected high-speed applications. It also provides additional protection for devices against electrical overstress (EOS) and electrical fast transients (EFT).

The working principle of the device is based on the avalanche breakdown of a reverse biased diode. Upon an ESD or EFT event, the PN junction of the diode breaks down and generates a large current that is able to clamp the voltage of the protected lines. The ATV02W170-HF diode has a clamp voltage of 12V and peak pulse current capabilities of up to 35A. The device is also designed with a low thermal impedance in order to dissipate the heat generated by the current.

The ATV02W170-HF diode is an ideal solution for protecting high speed signal lines and buses from ESD, EFT, and EOS events. It is capable of handling high peak pulse currents and offers a low capacitance that enables it to work in data rates up to 25 Gbps. It is also designed to dissipate the heat generated by the current in order to protect the device from damage, making it an excellent choice for applications requiring protection from ESD, EFT, and EOS events.

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