AUXDI2117STR

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PMIC - Gate Drivers, AUXDI2117STR application field and working principle

Power Management ICs, or PMICs, can provide a range of important capabilities such as controlling power flows, monitoring voltages, providing energy storage and handling protection. Gate driver ICs are one type of PMIC that allow the activation of power devices such as power MOSFETs and IGBTs, the building blocks of higher-power applications. Depending on the application, gate drivers can supply the necessary levels of logic and voltage needed to turn on the power devices.

The AUXDI2117STR is a dual high-side gate driver designed for driving N-channel MOSFETs and IGBTs.The part features a sense FET for monitoring the external MOSFETRDSon,and two comprehensive protection features.The AUXDI2117STR operates from a supply voltage from 6 V to 16 V, providing a nominal output current of 5 A.

Application Fields

The AUXDI2117STR can be used in many applications, such as motor controls or industrial applications, e.g., fan control, door opener, printer head, general motor driver or any other loads in an industrial environment. These high-side gate drivers can drive N-Channel MOSFETs or IGBTs and have the inherent ability to reach higher currents than the low-side drivers.

In automotive powertrain applications, such as hybrid electric vehicle (HEV) and electric vehicle (EV), the AUXDI2117STR provides a cost-effective alternative for powertrain inverter applications. To with-stand the high temperature environment in EVs, the AUXDI2117STR’s thermal shutdown and undervoltage protection is designed. The device can provide a nominal output of 5A and is tailored to drive a MOSFET gate to achieve higher efficiency..

Working Principle

An output circuit of the AUXDI2117STR drives the external power MOSFET using three key stages. First stage is the gate driver stage and the second stage is the level shifter stage and the last stage is the power stage.

In the gate driver stage, the on-cell logic level shifter includes a NPN output transistor with the gate terminal connected to the logic buffer output, the source terminal connected to GND and the drain terminal connected to the level shifter output. When the logic buffer output is low, the pull factor of the NPN output transistor is high and this causes the MOSFET gate voltage to go high. This will result in the power MOSFET turning on.

In the level shifter stage, the oscillator senses the gate voltage and compares it with the internal reference voltage Vref. When the gate voltage is higher than the Vref, the NPN output transistor of the level shifter is turned off and the power stage will receive the logic high level. The third stage, power stage, is the final stage of the AUXDI2117STR. It consists of an NPN output transistor and an external MOSFET to drive the external MOSFET. The NPN output transistor is connected between the power supply voltage (Vcc) and the source of the external MOSFET, and the drain of the external MOSFET is connected to the load. When the logic high level is received from the level shifter, the NPN output transistor will turn on and the external MOSFET will be activated.

Also, the AUXDI2117STR incorporates a senseFET to monitor the voltage at the drain terminal of the external MOSFET and measure its RDSon when the MOSFET is turned on. The senseFET is usually used to lower the power dissipation of the system since the on-resistance varies inversely with the drain current. If the RDSon is too high, it will cause too much power dissipation. The senseFET will then turn off the MOSFET in order to prevent excessive power dissipation.

Conclusion

In conclusion, the AUXDI2117STR is a dual high-side gate driver that can be used in motor control or industrial applications. It operates from a supply voltage of 6 V to 16 V and can provide a nominal output current of 5 A. Its on-cell logic level shifter, level shifter and power stage work together to drive the external power MOSFET and an embedded senseFET monitors the gate voltage. Overall, AUXDI2117STR is a great choice for increasing system efficiency.

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